Effect of indium mole fraction on infrared light emitting diode (LED) device performance

Abstract

We report on the design and fabrication of interband cascade light emitting diode (LED) device with InAs/Ga 1Àx In x Sb/InAs quantum well (QW) active region. We have varied indium (In) contents in the QW region between 18 and 30% from x ¼ 0.18 to 0.3 and found that light emission power increases with decrease of In percentage value. We observed a 200% increase in light emission power by decreasing the In content from 30 to 18%. By cooling the LED device, we observed a higher increase in light output power for higher In content devices compared to that of lower In content devices.

Advanced mid-infrared lightsources above and beyond lasers and their analytical utility

“…Das [ 78 ] and Koerperick et al [ 79 ] showed similar peak wavelengths of ~ 8 µm for an InAs/GaInSb/InAs multi quantum well (MQW) LED and a superlattice (SL) InAs/GaSb LED, respectively. Shortly after the publication mentioned above, Das published another paper [ 80 ] showing how varying the indium fraction (18–30%) of the InAs/Ga 1-x In x Sb/InAs structure with decreasing fraction leads to an increase of the emission intensity.…”

Compact photoacoustic module for methane detection incorporating interband cascade light emitting device

“…For some specialized spectroscopic chemical sensing applications and noninvasive analysis, broadband, incoherent radiation sources are preferred over single mode lasers due to their capability to cover a complete spectral absorption band of an analyte. Semiconductor light-emitting diodes emitting at wavelengths spanning 2-10 μm have been developed and commercialized [35][36][37][38][39]. Recently, interband cascade light emitting devices (ICLEDs, which are not strictly diodes) with 15 active stages reached a record continuous wave (cw) output power of ~1.6 mW when operated at T = 25 °C and I = 600 mA.…”