Efficiency of GaN/InGaN double-heterojunction photovoltaic cells under concentrated illumination

The necessity to find new forms of renewable energy is very important and urgent nowadays. The renewable sources of energy derived from the sun are one of the promising options. The photovoltaic cells as one of renewable energy sources have been largely studied in order to obtain cheap, efficient and secure PV cells. The conversion efficiency is the most important property in the PV domain. Indium gallium nitride (InGaN) alloys offer great potential for high-efficiency photovoltaics. We present numerical simulations of GaN/InGaN heterojunction solar cells by SCAPs simulation. The calculation of characteristic parameters: short-circuit current density, open-circuit voltage, and conversion efficiency. So, these simulations study the effect of indium content and thickness in these parameters. While the maximum efficiency of a p-n GaN/InGaN heterojunction solar cell with 0.2 indium composition is 2.78%, above an indium composition of 20%, the modeled heterojunction devices do not operate as solar cells.

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“…The table.2 summarizes all the results obtained in this simulation. Ours results are in agreement with those published in the literature20 .…”

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confidence: 94%

Numerical Study of InGaN based Photovoltaic by SCAPs Simulation

et al. 2015

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“…In general, the optimally obtained solar cells showed a 1.19% power-conversion efficiency under 30 mW/cm 2 intensity, which is higher than that reported by heterojunction solar cell grown using MOVPE . This is possibly due to the lower series ( R S ) and shunt ( R sh ) resistances recorded in this work . In this study, the R s of the devices were obtained following the method proposed in previous studies .…”

mentioning

confidence: 67%

“…The solar cells fabricated based on In 0.4 Ga 1–0.4 N exhibited lower series resistance compared to other samples with lower indium fractions, which should ensure the flow of high current at low applied voltages. Generally, the low series resistance can be related to several factors such as contact resistance, difference of the emitter thickness, doping concentration, and mobility. , On the basis of our Hall measurements, the lowest series resistance was observed for the sample with x = 0.4 with an accompanying higher doping concentration. The sample also exhibited the highest mobility, as it shows the lowest resistivity compared to the other samples.…”

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confidence: 69%

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Low-Temperature Solution-Processed Flexible Solar Cells Based on (In,Ga)N Nanocubes

Qaeed

Ibrahim

Saron

et al. 2014

ACS Appl. Mater. Interfaces

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Indium gallium nitride nanocubes were syntheized via a low-temperature chemical route. Energy-dispersive X-ray spectroscopy and X-ray diffraction analyses confirmed the successful fabrication of (In,Ga)N with various indium mole fractions. The bandgap of the material was tunded as a function of the indium content. The fabricated nanocubes showed a deep level photoluminescence emission at 734 nm as well as in the visible region at 435-520 nm. The Hall effect measurements showed the hole concentration to constantly increase from 6.2 × 10(16) to 2.3 × 10(18) cm(-3), while the hole mobility to decrease from 0.92 to 0.1 cm(2) /(V s) as the doping ratio increases from 0.005 to 0.025 cm(-3). The solar cell device made of nanocubes film containing 0.4 indium on flexible substrates showed a short-circuit current density of 12.47 mA/cm(2) and an open-circuit voltage (Voc) of 0.48 V with 54% fill factor. The relationship between Voc and indium content in the fabricated films was also investigated.

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“…They exhibited an open circuit voltage of about 2 V, fill factor of about 60%, and an external efficiency of 40% (10%) at 420 nm (450 nm). Trap-filling due to the high dislocation density of bulk, 5.5×10 8 cm −2 , and surface traps in GaN/ InGaN PV devices has been postulated as reducing of the collection efficiency of the photo-generated carriers [12]. This trapping mechanism would increase the series resistance (Rs) and reduce the shunt resistance (Rsh), reducing J SC .…”

Section: State-of-the-art Ingan Solar Cellsmentioning

confidence: 99%

Development of indium-rich InGaN epilayers for integrated tandem solar cells

et al. 2013

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InGaN epilayers have been investigated for use in photovoltaic solar cells for the past years. At present, almost all photovoltaic device structures reported have exhibited very low short circuit currents and thus very low solar conversion efficiency. This phenomenon has been attributed to point and extended defect chemistry in InGaN epilayers (e.g. vacancies, misfit dislocations, and V-defects), as well as to spinodal decomposition of the strained InGaN wurtzite lattice system. These defects become more dominant for higher indium concentration InGaN epilayers needed for multijunction photovoltaic device structures. In this work, we will report on the growth and characterization of indium-rich InGaN epilayers that have been grown by novel MOCVD growth technology, including the growth at superatmospheric reactor pressures.

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Efficiency of GaN/InGaN double-heterojunction photovoltaic cells under concentrated illumination

Cited by 11 publications

References 15 publications

Numerical Study of InGaN based Photovoltaic by SCAPs Simulation

Numerical Study of InGaN based Photovoltaic by SCAPs Simulation

Low-Temperature Solution-Processed Flexible Solar Cells Based on (In,Ga)N Nanocubes

Development of indium-rich InGaN epilayers for integrated tandem solar cells

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