Efficiency of Ferroelectric Field-Effect Transistors: An Experimental Study

Tasneem, Nujhat; Islam, Muhammad Mainul; Wang, Zheng; Zhao, Zijian; Upadhyay, Navnidhi K.; Lombardo, Sarah; Chen, Hang; Hur, Jae; Triyoso, Dina H.; Consiglio, Steven; Tapily, Kandabara; Clark, Robert D.; Leusink, Gert J.; Kurinec, Santosh; Datta, Suman; Yu, Shimeng; Ni, Kai; Passlack, M.; Chern, Winston; Khan, Asif Islam

doi:10.1109/ted.2022.3141988

Cited by 8 publications

(4 citation statements)

References 14 publications

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“…Standard memory characteristics of the FeFET are measured using a pulse sequence as shown in Figure 4 a: a pre-polarization pulse, a PGM pulse, an I D - V G read, an ERS pulse, and another I D - V G read [ 28 ]. In the figure, the amplitude of the PGM pulse is +4.5 V, and of the ERS pulse, −4.5 V; the pulse widths are 10 μs.…”

Section: Resultsmentioning

confidence: 99%

“…In this process, the FS as the dominant effect causes the MW to gradually increase. Although | V ERS | higher than 4.5 V will lead to further switching of the polarization, the increased CT effect in this voltage range overcompensates the influence of the ferroelectric polarization on the FeFET, resulting in a decrease in MW [ 28 ]. The relationship between CT and FS will be described in Section 3.2 .…”

Section: Resultsmentioning

confidence: 99%

“…The P - V characteristics are measured by applying a triangular pulse sequence to the gate of the FeFET at 2.5 kHz as shown by the black solid line in Figure 10 a, and short the Source, Drain, and substrate to the ground [ 28 , 34 , 35 ]. The maximum values of the triangular pulse sequence are V P = 4.5 V and V N = −4.5 V, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The clear polarization switching behavior can be observed in the P - V curve. The Current–Voltage curve shows a single loop hysteresis with two consistent peaks, which is also a typical characteristic of ferroelectric materials [ 28 ].…”

Section: Resultsmentioning

confidence: 99%

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Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors

Wang

et al. 2023

Nanomaterials

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A full understanding of the impact of charge trapping on the memory window (MW) of HfO2-based ferroelectric field effect transistors (FeFETs) will permit the design of program and erase protocols, which will guide the application of these devices and maximize their useful life. The effects of charge trapping have been studied by changing the parameters of the applied program and erase pulses in a test sequence. With increasing the pulse amplitude and pulse width, the MW increases first and then decreases, a result attributed to the competition between charge trapping (CT) and ferroelectric switching (FS). This interaction between CT and FS is analyzed in detail using a single-pulse technique. In addition, the experimental data show that the conductance modulation characteristics are affected by the CT in the analog synaptic behavior of the FeFET. Finally, a theoretical investigation is performed in Sentaurus TCAD, providing a plausible explanation of the CT effect on the memory characteristics of the FeFET. This work is helpful to the study of the endurance fatigue process caused by the CT effect and to optimizing the analog synaptic behavior of the FeFET.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%