2015
DOI: 10.1109/ted.2014.2375875
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Efficiency Evaluation of the Modular Multilevel Converter Based on Si and SiC Switching Devices for Medium/High-Voltage Applications

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Cited by 60 publications
(22 citation statements)
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“…The conduction loss, which is related to conduction voltage drop, current, duty cycle, and junction temperature, can be derived as the equations below [23].…”
Section: B Power Losses Of Igbt Modulesmentioning
confidence: 99%
“…The conduction loss, which is related to conduction voltage drop, current, duty cycle, and junction temperature, can be derived as the equations below [23].…”
Section: B Power Losses Of Igbt Modulesmentioning
confidence: 99%
“…It has many advantages over other multilevel inverters such as diode clamp multilevel, flying capacitors and cascaded H bridges. According to References [14][15][16][17], it can be summarized as follows:…”
Section: Introductionmentioning
confidence: 99%
“…Previous work has been reported in [3] to [7] comparing the performance of SiC over Si devices in multilevel topologies. In [3] and [7] a modular multilevel converter comparison simulation study was undertaken to evaluate the performance of Si IGBT and diode over SiC MOSFET and SiC JFET respectively.…”
Section: Introductionmentioning
confidence: 99%
“…In [3] and [7] a modular multilevel converter comparison simulation study was undertaken to evaluate the performance of Si IGBT and diode over SiC MOSFET and SiC JFET respectively. In reference [4] a study comparing the efficiency and operating temperatures of a medium power 3-level switched neutral point converter was undertaken by replacing the Si IGBT and Si antiparallel diode with their SiC counterparts.…”
Section: Introductionmentioning
confidence: 99%