Effet des traitements thermiques sur le comportement électrique des couches de silicium polycristallin pour des applications photovoltaïques

Dopant Segregation and Heat Treatment Effects on the Electrical Properties of Polycrystalline Silicon thin Films

“…A similar trend is observed for the boron doped samples. The difference in the free carrier concentration may be due to the existence of large quantities of dopants and trap carriers in grain boundaries in the case of arsenic doped as deposited [1]. When doping is increased, the potential barrier of the depleted region decreased less quickly, therefore the average width of the grain boundaries and the concentration of the ionized atoms become more and more important.…”

“…The grain boundaries form electrical shunts and increase the series resistance; they thus decrease the photovoltaic performance of these devices. The efficiency of the materials requires improvement and control of properties [1][2][3][4][5][6][7][8]. The low photovoltaic conversion efficiency obtained with solar cells made of polycrystalline silicon is mainly due to the electronic activity of grain boundaries.…”

Introductory Chapter: Silicon

“…Silicon materials are used in components of electronic devices. It is also used to make solar cells [9][10][11][12][13] and parts for computer circuits [14]. Solar cell is a device Table 1.…”

Introductory Chapter: Introduction to Photovoltaic Effect

“…They have dominated the market because of the abundance of silicon, nontoxicity, module efficiency, and excellent cell stability. There are various levels of skills for production of the evaluated technologies (monocrystalline [9], polycrystalline [10][11][12][13], amorphous [14], and inorganic and organics cells). The current operating data of the evaluated cells in their module state are compared in Table 1.…”