2010
DOI: 10.1143/jjap.49.086204
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Effects of Wafer Precleaning and Plasma Irradiation to Wafer Surfaces on Plasma-Assisted Surface-Activated Direct Bonding

Abstract: The plasma-assisted surface-activated bonding technique enables one to directly bond heterogeneous materials. The surface roughness of wafers is an important factor for achieving bonding. The effects of precleaning and plasma surface activation processes on the surface roughness are investigated for silicon-on-insulator (SOI), Ce-substituted yttrium iron garnet (Ce:YIG), InP and LiNbO3. We found that an appropriate precleaning process reduces the surface roughness. Also, the oxygen plasma irradiation to the wa… Show more

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Cited by 21 publications
(16 citation statements)
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“…The surface smoothness is an important factor for successful bonding. We examined the effects of pre-cleaning and surface activation processes on the roughness of the wafer surfaces [13]. A 500 nm-thick cerium-substituted yttrium iron garnet (YCe) 3 Fe 5 O 12 (Ce:YIG) single-crystalline layer was grown on a (111)-oriented substituted gadolinium gallium garnet (GdCa) 3 (GaMgZr) 5 O 12 (SGGG) substrate through a sputter epitaxial growth technique.…”
Section: Magneto-optical Materialsmentioning
confidence: 99%
See 2 more Smart Citations
“…The surface smoothness is an important factor for successful bonding. We examined the effects of pre-cleaning and surface activation processes on the roughness of the wafer surfaces [13]. A 500 nm-thick cerium-substituted yttrium iron garnet (YCe) 3 Fe 5 O 12 (Ce:YIG) single-crystalline layer was grown on a (111)-oriented substituted gadolinium gallium garnet (GdCa) 3 (GaMgZr) 5 O 12 (SGGG) substrate through a sputter epitaxial growth technique.…”
Section: Magneto-optical Materialsmentioning
confidence: 99%
“…A (100)-oriented SOI wafer, in which the silicon layer was 220 nm thick, was used for examining the effects of pre-cleaning and surface activation processes on the roughness of the wafer surfaces. The details of pre-cleaning processes are described in [13]. …”
Section: Magneto-optical Materialsmentioning
confidence: 99%
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“…The change in surface roughness was measured by AFM as a function of plasma exposure time. The results are shown in figure 2 [7]. As is shown in this figure, the oxygen plasma exposure reduces the surface roughness in both wafers at an exposure time of 10-30 s compared with the initial state.…”
Section: Wafer Bonding Of Garnetmentioning
confidence: 73%
“…Although Ce:YIG has many potential applications in PICs, there is one major issue in the process of their fabrication; Ce:YIG is not inherently compatible with PICs consisting of semiconductor optical components. There, an adhesive agent or plasma-assisted direct bonding [39,40] are currently employed for YIG joining, but neither of these processes is sufficient for mechanical, chemical, and thermal durability. On the key issue of how one can incorporate optical and magnetic components into one device, our proposed technique is very appealing because optical and magnetic microstructures can be directly fabricated at one time without any additional process.…”
Section: Femtosecond Laser Fabrication In Ce:yigmentioning
confidence: 99%