Effects of variations in precursor concentration on the growth of rutile TiO2 nanorods on Si substrate with fabricated fast-response metal–semiconductor–metal UV detector

Selman, Abbas M.; Hassan, Z.

doi:10.1016/j.optmat.2015.02.028

Cited by 20 publications

(2 citation statements)

References 79 publications

(84 reference statements)

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“…Dominant peaks were observed in Figure 4 and indexed as (100), ( 102), ( 110) and ( 200), (201) for GaN-NC grown on glass substrates. Meanwhile, the lattice constants (L.C) a and c, strain (ζ a , ζ c ), size of crystalline (D) and lattice mismatch (d) were obtained from the highest peak namely (100) using famous equations [16,17] as listed in Table 2. The optical energy gap was calculated (Fig.…”

Section: Structural Analysis and Energy Gapmentioning

confidence: 99%

Synthesis and Characterization of GaN Nanocrystalline Thin Films on Various Substrates by RF Magnetron Sputtering

Selman

2020

ETN

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Gallium nitride (GaN) nanocrystalline (NC) thin films (TH) were deposited on different surfaces of material as substrates; quartz, glass as well as fluorine-doped tin oxide (FTO) using radio frequency (RF) reactive magnetron sputtering method. The effects of substrate type on structural and morphological properties of GaN-NCTH were studied. X-ray diffraction analyses and field-emission scanning electron microscopy (FESEM) images showed that the GaN particles have covered all surfaces of the substrates with a smooth arrangement. The root mean square (RMS) surface roughness was 30.8, 1.45 and 1.46 nm for the GaN-NCTH deposited on FTO, glass and quartz substrates, respectively. Based on the GaN-NCTH prepared onto glass substrate, the optical bandgap was calculated to be 3.38 eV.

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Section: Structural Analysis and Energy Gapmentioning

confidence: 99%

Synthesis and Characterization of GaN Nanocrystalline Thin Films on Various Substrates by RF Magnetron Sputtering

Selman

2020

ETN

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“…In the case of spiropyran (SP) dye, as a comparison, the dipole moment variation after UV irradiation is minimal from 6.44 D to 13.9 D [ 16 , 17 ]. The photo-switchable dielectric properties of the SO dye can be used for UV sensing with electrical measurements by introducing the photochromic layer as a UV-sensitive insulating layer in thin-film-transistor (TFT) [ 26 , 27 , 28 ] or metal-insulator-metal (MIM) electronic structures [ 29 , 30 , 31 , 32 ].…”

Section: Introductionmentioning

confidence: 99%

Tilted Orientation of Photochromic Dyes with Guest-Host Effect of Liquid Crystalline Polymer Matrix for Electrical UV Sensing

Ranjkesh

Park

et al. 2015

Sensors

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We propose a highly oriented photochromic dye film for an ultraviolet (UV)-sensing layer, where spirooxazine (SO) derivatives are aligned with the liquid crystalline UV-curable reactive mesogens (RM) using a guest-host effect. For effective electrical UV sensing with a simple metal-insulator-metal structure, our results show that the UV-induced switchable dipole moment amount of the SO derivatives is high; however, their tilting orientation should be controlled. Compared to the dielectric layer with the nearly planar SO dye orientation, the photochromic dielectric layer with the moderately tilted dye orientation shows more than seven times higher the UV-induced capacitance variation.

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UV-to-NIR broadband photodetecting sensors using n-TiO2 nanorods/p-Si heterojunction in lateral and vertical configurations

Nallabala¹,

Singh²,

Yuvaraj³

et al. 2023

Appl. Phys. A

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Effects of variations in precursor concentration on the growth of rutile TiO2 nanorods on Si substrate with fabricated fast-response metal–semiconductor–metal UV detector

Cited by 20 publications

References 79 publications

Synthesis and Characterization of GaN Nanocrystalline Thin Films on Various Substrates by RF Magnetron Sputtering

Synthesis and Characterization of GaN Nanocrystalline Thin Films on Various Substrates by RF Magnetron Sputtering

Tilted Orientation of Photochromic Dyes with Guest-Host Effect of Liquid Crystalline Polymer Matrix for Electrical UV Sensing

UV-to-NIR broadband photodetecting sensors using n-TiO2 nanorods/p-Si heterojunction in lateral and vertical configurations

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