Effects of vacuum heat treatment on the photoelectric work function and surface morphology of multilayered silver–metal electrical contacts

Akbi, Mohamed; Bouchou, Aïssa; Zouache, Noureddine

doi:10.1016/j.apsusc.2014.02.110

Cited by 26 publications

(6 citation statements)

References 38 publications

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“…It is widely acknowledged that the ideal Schottky barrier can be identified by a discrepancy in the work function between the semiconductor and the metal; the work function was found to be 5.1 eV for the CuInSe 2 bulk material and 4.26-4.35 eV for Ag. 36,37 Thus, the Schottky barrier was approximately 0.75-0.84 eV. At an annealing temperature less than 550 • C, the poor diode characteristics and work function differed from the value of 5.1 eV predicted by CuInSe 2 bulk theory.…”

Section: Resultsmentioning

confidence: 88%

Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Cheng

Wang

Tsai

et al. 2017

ECS J. Solid State Sci. Technol.

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CuInSe 2 nanowire (NW) arrays were prepared in a heated electrolyte (45 • C) through anodized aluminum oxide template-assisted pulse electrodeposition. After the CuInSe 2 NWs were as-grown, grazing incidence X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) revealed the recrystallization status of the CuInSe 2 NWs annealed at temperatures ranging from 250 • C to 550 • C. The results indicated that the NWs underwent a phase transformation from the (204/220) plane to the (112) plane. Additionally, the material particle size and quantum dots were measured using HRTEM and ultraviolet/visible spectroscopy. The particle size of the as-grown CuInSe 2 NWs ranged from 3.8 to 8 nm. The as-grown CuInSe 2 NWs exhibited a blue-shift in the material absorption band at 1100 and 1200 nm compared with those annealed at 550 • C. The results of scanning electron microscopy had a diameter and length of 80 nm and 2.2 μm, respectively. Mott-Schottky and ohmic contact plots revealed that the CuInSe 2 NWs were p-type semiconductors. Moreover, the different leakage current mechanisms of the nonideal Schottky diode were studied. Finally, near-ideal Schottky barrier diodes were obtained at an annealing temperature of 550 • C, and their work function was estimated to be in the range of 5.04-5. Copper indium selenide (CuInSe 2 ) is commonly used in photovoltaic applications because of its excellent properties, including the presence of a direct bandgap, a high absorption coefficient (> 10 5 cm −1 ), and high thermal and electrical stabilities. 1 According to the literature, thin-film CuInSe 2 solar cells fabricated through electrodeposition exhibit a conversion efficiency of approximately 8.7%, 2 and quaternary compound (CuIn 1-x Ga x Se 2 ) devices exhibit a conversion efficiency of 15.4%.3 However, the minority carrier lifetime of the thin-film structure is short because minority carriers have the longest mobility path (depending on material thickness). Onedimensional (1D) semiconductor nanostructures such as nanorods, nanowires (NWs), and nanotubes have been extensively investigated. These nanostructures show great promise to replace traditional thinfilm structures in optoelectronic and photovoltaic devices because of their unique optical and electronic properties, and because the geometry of 1D nanostructures can influence device performance.4-9 The 1D nanostructure can provide light absorption and a short carrier mobility path (radius of the NW) for minority carrier extraction efficiency. On the other hand, 1D nanostructure carrier lifetimes can be extended by improving scattering mechanisms and lattice vibration. The carrier mobility depends on the grain boundary, and this phenomenon implies that energy loss and the transfer of heat energy inside the material causes lattice vibration. It's worth mentioning, single-phase nanostructure can be easily achieved by control growth mechanisms and annealed through anodized aluminum oxide (AAO) templateassisted pulse electrodeposition. 10,11 Moreover, in the ternary...

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Section: Resultsmentioning

confidence: 88%

Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Cheng

Wang

Tsai

et al. 2017

ECS J. Solid State Sci. Technol.

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“…Schottky barrier heights are primarily determined by the work function of metals and the electron affinity of the CH 3 NH 3 PbCl 3 single crystal. A high Schottky barrier is formed at the interface of Ag (the work function of −4.26 eV) 17 and the single crystal, and a low Schottky barrier is formed at the interface of Au (the work function of −5.1 eV) 15 and the single crystal. So the asymmetrical Schottky interdigital contacts are generated by Au–Ag electrodes of the device, which leads to the asymmetrical I – V behavior of the device under forward and reverse bias.…”

Section: Resultsmentioning

confidence: 99%

High performance of CH₃NH₃PbCl₃ perovskite single crystal photodetector with a large active area using asymmetrical Schottky interdigital contacts

Zheng

Tian

et al. 2022

RSC Adv.

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“…To bring our measurements to a successful conclusion, an adapted experimental apparatus has been built up; it has been briefly given in [14]- [19]. The experimental device is mainly composed of the following elements that are shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…However, it is interesting to point out from the obtained results that there is a discrepancy for silver of about 0.04 eV, question arises as to whether the simplified version of Fowler's method introduces errors in the results. In addition, the discrepancies between the results obtained using the two Fowler's methods were discussed in [19].…”

Section: A Effect Of Temperaturementioning

confidence: 99%

“…This metallographic polishing type is used to flatten or to remove the protrusions present on the electrodes, by tearing most of the impurities and other surface defects. Each electrode is then subjected to a cleaning in ultrasonic tank (#15 min), in a bath of trichloroethylene, rinsed with water, and then cleaned with a lint free paper soaked in acetone [14]- [19]. This kind of conditioning allows surface cleaning and impurity elimination (adsorbed molecules and atoms).…”

Section: E Preparation and Analysis Of Contactsmentioning

confidence: 99%

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A Method for Measuring the Photoelectric Work Function of Contact Materials Versus Temperature

Akbi¹

2014

IEEE Trans. Compon., Packag. Manufact. Technol.

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The nature of the contact material plays a key role to determine the characteristics of electrical arcs and particularly those related to electronic emission. Mechanical and thermodynamic properties as well as electronic emission of such complicated alloys present a lack of reliable and accurate experimental data. The purpose of this paper is to present the development of a method for measuring photoelectric work functions of contact materials. Also reported in this paper are the results of experimental work whose purpose has been the buildup of a reliable photoelectric system and associated monochromatic ultraviolet radiations source, and the photoelectric measurement of the EWF of contact materials. As a first test of the experimental Ultra High Vacuum setup, the electron work functions (EWF) of silver contacts, namely pure polycrystalline metals that are actually used in relays, were measured photoelectrically, using both Fowler's method of isothermal curves and linearized Fowler plots. Ultrahigh vacuum techniques were employed to obtain residual gas pressure of about 5×10 −9 mbar that allows accurate and reliable photoelectric work function measurements. The EWF measured at room temperature of polycrystalline Ag contact (as commercially available) increased from 3.70 eV before heating, to 4.30 eV, and finally, stabilized at the vicinity of 4.26 eV after several vacuum heat treatments at 533 and 773 K. The EWF value obtained, i.e., 4.26 ± 0.03 eV, is in good agreement with the results found in the literature. This shows that the experimental method is valid and the experimental setup is usable. Furthermore, new photoelectric measurements versus temperature have shown a linear decrease of the EWF of silver contacts with increasing temperature, i.e., the temperature coefficient α = dφ/d t is constant and negative α = −4.58 · 10 −4 eV/K in the experiment temperature range 300-780 K.Index Terms-Contact materials, electron work function (EWF), Fowler's Methods, photoemission, temperature dependence, vacuum heat treatment.

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Effects of vacuum heat treatment on the photoelectric work function and surface morphology of multilayered silver–metal electrical contacts

Cited by 26 publications

References 38 publications

Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

High performance of CH₃NH₃PbCl₃ perovskite single crystal photodetector with a large active area using asymmetrical Schottky interdigital contacts

A Method for Measuring the Photoelectric Work Function of Contact Materials Versus Temperature

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Effects of vacuum heat treatment on the photoelectric work function and surface morphology of multilayered silver–metal electrical contacts

Cited by 26 publications

References 38 publications

Characteristics of Quantum Dots and Single-Phase p-CuInSe2Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Characteristics of Quantum Dots and Single-Phase p-CuInSe2Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

High performance of CH3NH3PbCl3 perovskite single crystal photodetector with a large active area using asymmetrical Schottky interdigital contacts

A Method for Measuring the Photoelectric Work Function of Contact Materials Versus Temperature

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Product

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Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

High performance of CH₃NH₃PbCl₃ perovskite single crystal photodetector with a large active area using asymmetrical Schottky interdigital contacts