Effects of twin boundaries on the void formation in Cu-filled through silicon vias under thermal process

Zhao, Xu; Ma, Limin; Wang, Yishu; Guo, Fu

doi:10.1007/s10854-019-00882-4

Cited by 3 publications

(4 citation statements)

References 22 publications

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“…Critical dimensions (CD) Signal integrity, device reliability OCD [6], WLI [7], CD-SEM [8], CD-SAXS [9], AFM [10], FIB-SEM (destructive) [11], TEM (destructive) [12] Bonding overlay Stacking accuracy, bonding reliability, signal integrity IR microscopy [13], IBO [14], DBO [15] TSV Voids Electrical and reliability failures, signal integrity FIB-SEM (destructive) [16], SAM [17], X-ray microscopy [18] Bonded interface defects Bonding reliability, signal integrity IR microscopy [19], SAM [20], FIB-SEM (destructive) [21] Bond strength uniformity Bonding reliability, cracking Micro-chevron testing [22] Stress/Strain measurement Bonding reliability, cracking, warpage, mechanical failure Raman [23], XRD [24], EBSD [25] * OCD: Optical critical dimension, WLI: White light interferometer, SEM: Scanning electron microscopy, SAXS: Small angle X-ray scattering, AFM: Atomic force microscopy, FIB: Focused ion beam, IR: infrared, IBO: Image-based overlay, DBO: Diffraction-based overlay, SAM: Scanning acoustic microscopy, XRD: X-ray diffraction, EBSD: Electron backscatter diffraction.…”

Section: Metrology Targets Impacts On Device Performance Current Solu...mentioning

confidence: 99%

Advancements in metrology for advanced semiconductor packaging

Chein,

Pandey,

Das

et al. 2024

Optics and Photonics for Advanced Dimensional Metrology III

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In the wake of continuous miniaturization, optical metrology has solidified its role as an essential instrument in semiconductor manufacturing, chiefly due to its non-invasive, high-precision, and rapid measurement capacities. Particularly crucial in advanced techniques such as automated optical inspection (AOI), its significance grows with the rising demand for accurate 3D integrated circuit packaging characterization. This introduces notable challenges for optical metrology, which need addressing to meet rigorous in-line process demands. This talk aims to present an overview of key measurement methods in semiconductor fabrication, encompassing CD-SEM, X-ray or EUV scatterometry, reflectometry for optical critical dimension (OCD) metrology, AFM, advanced optics, and white light interferometry. The talk will share insights into the intrinsic limitations of these techniques, potential future innovations, and recent advancements in optical metrology. The session will conclude with a perspective on the evolution of these techniques amidst the prevailing technological constraints.

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Section: Metrology Targets Impacts On Device Performance Current Solu...mentioning

confidence: 99%

Advancements in metrology for advanced semiconductor packaging

Chein,

Pandey,

Das

et al. 2024

Optics and Photonics for Advanced Dimensional Metrology III

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“…In addition, protrusion profiles were found to show different surface characteristics. The influence of annealing conditions on the protrusion profiles was recently examined by Zhao [14,15], in which the protrusion profiles were classified into global and local protrusion according to the variation of grain structures after annealing at different temperatures. Due to the impact of stresses from the adjoining TSVs, the deformation behavior of TSVs is also influenced by the pitch distance.…”

Section: Introductionmentioning

confidence: 99%

Simulation of TSV Protrusion in 3DIC Integration by Directly Loading on Coarse-Grained Phase-Field Crystal Model

et al. 2022

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As thermal management in 3DIC integration becomes increasingly important in advanced semiconductor node processes, novel experimental and modeling approaches are in great demand to reveal the critical material issues involving multiscale microstructures that govern the behavior of through-silicon-via (TSV) protrusion. Here, a coarse-grained phase-field crystal model properly coupled with mechanics through the atomic density field is used to simulate the formation of polycrystalline structures and protrusion of nano-TSVs from the atomic scale. TSVs with different grain structures are directly loaded, and protrusion/intrusion profiles are obtained along with displacement, stress, and strain fields. Thermodynamic driving forces from external loadings and the mismatch of Young’s modulus between adjoining grains as well as detailed displacement and strain distributions are ascribed to control the complex deformation in TSVs. TSVs with sizes up to around 30 nm and an aspect ratio of 4 are successfully investigated, and a further increase in the size and aspect ratio to cover the micrometer range is feasible, which lays down a solid basis toward a multiscale material database for simulation inputs to the design of TSV-based 3DIC integration and relevant electronic design automation (EDA) tools.

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“…However, SEM imaging analysis of the cross section of the TSV is destructive, time consuming and depends on the sample-cutting technique (Fursenko et al, 2015). Another nanoscale imaging tool is the atomic force microscope (AFM), which can offer quantitative measurement of surface undulation (Bender et al, 2012;Zhao et al, 2019). Nevertheless, a narrow field of view makes it difficult to conclude an overall evaluation on the etching process.…”

Section: Introductionmentioning

confidence: 99%

“…Obviously, this is not the real case for practical TSV etching. The transmission electron microscope (TEM) is often reported as a tool for thickness measurement of dielectric layers and diffusion barrier layers because of its extremely high spatial resolution (Bender et al, 2012;Zhao et al, 2019). Although the methods listed above have their advantages, they share the same limitation that the overall 3D information cannot be acquired.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography

Li¹,

Deng²,

Zhang³

et al. 2020

J Synchrotron Radiat

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Comprehensive evaluation of through-silicon via (TSV) reliability often requires deterministic and 3D descriptions of local morphological and statistical features of via formation with the Bosch process. Here, a highly sensitive phase-contrast X-ray microtomography approach is presented based on recorrection of abnormal projections, which provides comprehensive and quantitative characterization of TSV etching performance. The key idea is to replace the abnormal projections at specific angles in principles of linear interpolation of neighboring projections, and to distinguish the interface between silicon and air by using phase-retrieval algorithms. It is demonstrated that such a scheme achieves high accuracy in obtaining the etch profile based on the 3D microstructure of the vias, including diameter, bottom curvature radius, depth and sidewall angle. More importantly, the 3D profile error of the via sidewall and the consistency of parameters among all the vias are achieved and analyzed statistically. The datasets in the results and the 3D microstructure can be applied directly to a reference and model for further finite element analysis. This method is general and has potentially broad applications in 3D integrated circuits.

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Effects of twin boundaries on the void formation in Cu-filled through silicon vias under thermal process

Cited by 3 publications

References 22 publications

Advancements in metrology for advanced semiconductor packaging

Advancements in metrology for advanced semiconductor packaging

Simulation of TSV Protrusion in 3DIC Integration by Directly Loading on Coarse-Grained Phase-Field Crystal Model

Comprehensive characterization of TSV etching performance with phase-contrast X-ray microtomography

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