Effects of thickness and deposition temperature of ALD ZnO on the performance of inverted polymer solar cells

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2 ¯ 01 $$ \overline{2}01 $$ ) Heterojunctions

“…The lattice hydrogen H + ion acts as a compensating center, and it can bind with the V Zn around the dislocation and stacking faults core, ensuring the acceptor-type complex defect for p-type conductivity [35]. More residual –OH groups in the ZnO film are obtained at a lower growth temperature, i.e., 150 °C [36]. The acceptor level near the VBM reduces with the temperature, leading to an effectively downward shift in E V of ZnO, thus the ∆E V becomes lower.…”

Toward controlling the Al2O3/ZnO interface properties by in situ ALD preparation

“…53 The concentration of O-H groups might be reduced by increasing the T s value, causing more complete reactions between the metal precursor molecules and residual O-H groups. 54 However, a temperature increase might also trigger the formation of oxygen vacancies especially in the ZnO film, resulting in an enhancement of Zn interstitials as reported in the recent literature. 55 The determination of the band gap using optical methods is often not possible when the deposited layers are very thin or when the band gap is indirect.…”

Hydrogen and Deuterium Incorporation in ZnO Films Grown by Atomic Layer Deposition

“…ZnO films deposited with DEZ and water are polycrystalline with a hexagonal wurtzite crystal structure [10,17]. While the crystal structure itself does not change, the preferred orientation of the crystals can change with the deposition temperature [10,13,18]. In addition, the substrate [17] and the process parameters such as pulse and purging times [19] have been found to affect the crystal orientation.…”