Effects of the thickness of GaAs spacer layers on the structure of multilayer stacked InAs quantum dots

Kim, Hyung Seok; Suh, Jin-Ho; Park, Chan Gyung; Lee, Sang Jun; Noh, Sam Kyu; Song, Jin Dong; Park, Yong Ju; Choi, Won Jun; Lee, Jung Il

doi:10.1016/j.jcrysgro.2008.10.054

Cited by 12 publications

(2 citation statements)

References 18 publications

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“…High-quality RFeAsO (R = rare earth) single crystals of submillimeter size were first grown out of NaCl flux under ambient or high pressure. [2][3][4][5] Later, NaAs flux was employed to successfully grow millimeter-sized single crystals under ambient pressure. 6 The larger crystals, with a typical size of 3 × 4 × 0.05 ∼ 0.3 mm 3 , have enabled the study of peculiar physical properties of this new family of superconductors with various techniques including neutron scattering.…”

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confidence: 99%

Contamination from magnetic starting materials in flux-grown single crystals ofRFeAsO superconductors

et al. 2011

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While the flux growth often provides the best method for obtaining single crystals of new-novel materials, the process is prone to producing crystals with trapped second-phase inclusions. In the case of NdFeAsO single crystals grown out of NaAs flux under ambient pressure, some crystals show a lambda anomaly in the specific heat curve at ~12 K. This anomaly is missing in other crystals from the same batch. We show that the lambda anomaly at 12 K is from residual NdAs starting material which is mainly on the edges of the crystals. The isothermal magnetization of LaFeAsO at 300 K clearly illustrates the effect of ferromagnetic impurities on the magnetic properties of LaFeAsO crystals.

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confidence: 99%

Contamination from magnetic starting materials in flux-grown single crystals ofRFeAsO superconductors

et al. 2011

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“…Over the past several years, a three-dimensional quantum-confined structure, quantum dot (QD), has attracted considerable interest from both fundamental physics and potential device applications [1][2][3][4][5][6]. For example, a QD laser diode is expected to have high thermal stability, a low threshold current density, and a high gain due to the unique properties of QDs, atomic-like electronic states, and a delta-function-like density of states.…”

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confidence: 99%

Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors

Kim

Jeon

et al. 2010

Acta Phys. Pol. A

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Multi-stacked InAs QDs embedded in ten periods of GaAs/In0.1Ga0.9As strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/In0.1Ga0.9As strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850• C. At annealing temperature of 600• C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.

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Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness

et al. 2016

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Effects of the thickness of GaAs spacer layers on the structure of multilayer stacked InAs quantum dots

Cited by 12 publications

References 18 publications

Contamination from magnetic starting materials in flux-grown single crystals ofRFeAsO superconductors

Contamination from magnetic starting materials in flux-grown single crystals ofRFeAsO superconductors

Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors

Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness

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