Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness

Hernández-Saz, Jesús; Herrera, M.; Molina, S. I.; Stanley, CR; Duguay, S.

doi:10.1016/j.actamat.2015.10.048

Cited by 6 publications

(1 citation statement)

References 55 publications

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“…Laser assisted APT has now extensively been applied for 3 dimensional nanometer scale characterizations of III-nitride semiconductors and devices [35,36]. This technique can simultaneously provide geometrical and compositional information of nano-size features such as quantum wells [37,38], QDs [39,40], or even defects [41,42]. Here, APT is particularly interesting to study compositional fluctuations of indium and gallium in the dots, as well as their shape and interface sharpness.…”

Section: Introductionmentioning

confidence: 99%

Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition

Reilly

Bonef

Nakamura

et al. 2019

Semicond. Sci. Technol.

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InGaN quantum dots were grown by metalorganic chemical vapor deposition and shown to exhibit a bimodal size distribution. Atom probe tomography was used to characterize the dots in conjunction with atomic force microscopy, photoluminescence, and x-ray diffraction. Small dots with low indium contents were found to coexist with larger, very high indium composition dots. Significant compositional fluctuations were observed in the small dot population. The dots showed abrupt interfaces with the surrounding GaN, verifying the ability to cap the dots without causing intermixing for even extremely high indium content dots.

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