Effects of the overlap between wave functions of impurity centers on the activation energy of hopping conduction

Melnikov, A. P.; Gurvich, Yu. A.; Shestakov, L. N.; Gershenzon, E. M.

doi:10.1134/1.568267

Cited by 5 publications

(1 citation statement)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7(b). [64][65][66][67][68][69][70][71] So these phenomena will promote the transfer of photogenerated charges. It is inferred that a smaller difference in the conduction band edges and a larger overlapping of the wave functions will facilitate the photogenerated charges migration and separation, which will induce a higher efficiency of photovoltaic conversion.…”

Section: Surface Photovoltage Spectramentioning

confidence: 99%

Effect of energy level matching on the enhancement of photovoltaic response about oxide/Zn2SnO4 composites

Zheng

Zhang

et al. 2011

J. Mater. Chem.

View full text Add to dashboard Cite

Section: Surface Photovoltage Spectramentioning

confidence: 99%

Effect of energy level matching on the enhancement of photovoltaic response about oxide/Zn2SnO4 composites

Zheng

Zhang

et al. 2011

J. Mater. Chem.

View full text Add to dashboard Cite

Conductivity via impurities in low‐doped uncompensated silicon

Melnikov

2002

Physica Status Solidi (b)

View full text Add to dashboard Cite

PACS 71.55.Cn, 72.80.Cw It was found that in low-doped silicon crystals (2 × 10 16 < N < 10 17 cm −3 ) with compensation rate decrease (10) the experimental results differ from the theoretical ones. At low electric fields (E) this concerns the values of the activation energy (ε 3 ) and the dependence of ε 3 on N and K. The results are explained by the influence of neutral impurity interaction on the density of states. With increasing E a previously unknown conductivity (σ M ) appears. The dependence of σ M on N, K, E, magnetic field (H), and temperature (T) is quite different from the dependence that is usual for σ 3 conductivity. The results are explained by the appearance of conductivity via H − -like states of impurities, which are concentrated in the vicinity of edge dislocations.

show abstract

Activation Energy of DC Hopping Conductivity of Lightly Doped Weakly Compensated Crystalline Semiconductors

Poklonski,

Anikeev,

Vyrko

et al. 2024

Physica Status Solidi (b)

View full text Add to dashboard Cite

A model is proposed for calculating the thermal activation energy of direct current hopping conductivity via nearest neighbors in lightly doped and weakly compensated crystalline semiconductors with hydrogen‐like impurities. The temperature region is considered in which hops of single holes occur only between acceptors randomly distributed over the crystal (or hops of single electrons only between donors). The model is based on the idea of the Coulomb blockade of charge carriers by the field of compensating impurities (trap impurities). The hopping length of a hole between acceptors (or an electron between donors) is assumed to be equal to the critical (percolation) radius of the spherical region per a majority (doping) impurity atom. At a critical radius, an infinite cluster connecting ohmic contacts is formed in the crystal, along which charge carriers move in a hopping manner via majority impurities. The value of is defined as average work on overcoming the electrostatic Coulomb blockade by a charge carrier and its hopping via the electrically conducting cluster to “infinity”. The results of calculating by the proposed model of the Coulomb blockade for the most well‐studied bulk germanium and silicon p‐ and n‐type crystals are consistent with known experimental data.

show abstract

Effects of the overlap between wave functions of impurity centers on the activation energy of hopping conduction

Cited by 5 publications

References 1 publication

Effect of energy level matching on the enhancement of photovoltaic response about oxide/Zn2SnO4 composites

Effect of energy level matching on the enhancement of photovoltaic response about oxide/Zn2SnO4 composites

Conductivity via impurities in low‐doped uncompensated silicon

Activation Energy of DC Hopping Conductivity of Lightly Doped Weakly Compensated Crystalline Semiconductors

Contact Info

Product

Resources

About