Conductivity via impurities in low‐doped uncompensated silicon

Abstract

PACS 71.55.Cn, 72.80.Cw It was found that in low-doped silicon crystals (2 × 10 16 < N < 10 17 cm −3 ) with compensation rate decrease (10) the experimental results differ from the theoretical ones. At low electric fields (E) this concerns the values of the activation energy (ε 3 ) and the dependence of ε 3 on N and K. The results are explained by the influence of neutral impurity interaction on the density of states. With increasing E a previously unknown conductivity (σ M ) appears. The dependence of σ M on N, K, E, magnetic field (H), and temperature (T) is quite different from the dependence that is usual for σ 3 conductivity. The results are explained by the appearance of conductivity via H − -like states of impurities, which are concentrated in the vicinity of edge dislocations.