Effects of the Cu Ion on the Structural and Optical Properties of Yttrium Doped ZnO by Solution Combustion

López-Romero, S.; Quiroz-Jiménez, M. J.; Garcı́a-Hipólito, M.; Aguilar-Castillo, A.

doi:10.4236/wjcmp.2017.74008

Cited by 3 publications

(3 citation statements)

References 26 publications

(18 reference statements)

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“…interstitial sites rather than the sites of Zn 2+ ions, as the 5D 0 → 7F 0 transition is strictly forbidden due to the same total angular momentum . In addition, it has been observed that the intensity corresponding to 5 D 0 → 7 F 2 transition at 612 nm increases as the doping concentration increases and could be attributed to the transfer of energy from ZnO host to Eu 3+ ion …”

Section: Resultsmentioning

confidence: 99%

Effect of Eu Doping on the Physical, Photoluminescence, and Photocatalytic Characteristics of ZnO Thin Films Grown by Sol–Gel Method

Rayes

Kumar

Cortés-Jácome

et al. 2017

Physica Status Solidi (a)

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Eu doping concentration driven effect on the morphological, electrical, and optical properties of ZnO films prepared by sol gel method have been studied systematically. The properties of the films were studied using various experimental tools such as XRD, AFM, XPS, photoconductivity, UV–vis spectroscopy, photoluminescence (PL), and photocatalytic activity. Eu incorporation into the ZnO lattice was confirmed by XPS analysis. A decrease in crystallite size with increasing Eu concentration was observed. PL spectra showed that Eu‐ related light emission intensity reached a maximum at 6 wt.%. Photoconductivity measurements showed maximum photosensitivity for 4 wt.% Eu doped film. The photocatalytic activity of Eu‐ doped films was evaluated for methylene blue degradation and is found to be maximum for 6 wt.% Eu doped film.

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Section: Resultsmentioning

confidence: 99%

Effect of Eu Doping on the Physical, Photoluminescence, and Photocatalytic Characteristics of ZnO Thin Films Grown by Sol–Gel Method

Rayes

Kumar

Cortés-Jácome

et al. 2017

Physica Status Solidi (a)

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“…Zinc oxide (ZnO) is a II-VI semiconductor with wide direct band gap energy (3.37 eV) at room temperature, that is suitable for short wavelength optoelectronic applications and it has a large exciton binding energy (60 meV). Due to its properties like low cost, non-toxicity, abundance in nature, suitability to doping, ZnO has got wide device applications in different areas such as ultraviolet light-emitters, gas sensors, piezoelectric transducers, and solar cells [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

The Effects of Mn Doping on the Structural and Optical Properties of ZnO

Bilgili¹

2019

Acta Phys. Pol. A

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Zn1−xMnxO (x = 0.00, 0.01, and 0.05, respectively) was synthesized by using solid state reaction method. The structural properties were characterized by using X-ray diffraction and scanning electron microscopy. Optical properties were investigated by UV-visible spectroscopy. X-ray diffraction patterns indicate that all samples have hexagonal wurtzite structure without any impurity phases. The diffraction intensity increases and the peak position shifts to a lower 2θ angle with Mn concentration. The lattice parameters a and c, the volume of unit cell increase with Mn content indicating that Mn 2+ ions go to Zn 2+ ions in ZnO lattice. The grain size increases with Mn doping while the microstrain and dislocation density decrease. UV-vis spectra of the samples show that undoped ZnO sample has an energy band gap Eg of 3.34 eV. The optical study indicates a red shift in the absorbance spectra and a decrease in the band gap Eg with Mn content. This decrease of band gap may be attributed to the influence of dopant ions. The morphology and grain distribution of ZnO samples were analysed by scanning electron microscopy. The particle sizes are higher in doped samples when compared to the undoped sample and the surface roughness increases with Mn content. The grains are closely, densely packed and pores/voids between the grains increase with Mn content.

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“…On the other hand, this ion is used mainly for its red emission located around 615 nm. This ion is an important candidate for doping ZnO [19][20][21][22][23][24][25][26], due to its possible application in the optoelectronics field, which attracts research groups. Though, the pure and narrow red broadcast could not be obtained, because the latter is always accompanied by a large green emission from the auto-activation centers.…”

Section: Introductionmentioning

confidence: 99%

Red luminescence and UV light generation of europium doped zinc oxide thin films for optoelectronic applications

Jouad¹,

Bouabdalli²,

Touhtouh³

et al. 2020

Eur. Phys. J. Appl. Phys.

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In the present work, the Europium doped Zinc Oxide thin films were elaborated using spray pyrolysis technique. We are interested in investigating the structural properties, photoluminescence (PL) and third harmonic generation (THG) of the elaborated films. The structural properties of as-prepared thin films were characterized by X-ray diffraction (XRD). It confirms that all deposited thin films of Europium doped Zinc Oxide are crystallized in the hexagonal wurtzite structure. Both undoped and doped europium thin films show strong preferred c-axis orientation. Photoluminescence (PL) emission from Europium doped Zinc Oxide thin films, under excitation by 266 nm, shows characteristic transitions of Europium (5D0→7F0, 5D0→7F1, 5D0→7F2, …). It reveals the good incorporation of Eu3+ ions in the ZnO host. Additionally, the 5D07F2 is the most intense transition usually observed for Eu3+ embedded in materials of Zinc Oxide lattice. The dependence of third-order nonlinear susceptibility on doping rate was evaluated. The highest nonlinear susceptibility χ3 is obtained for the 5% Europium doped ZnO sample.

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Effects of the Cu Ion on the Structural and Optical Properties of Yttrium Doped ZnO by Solution Combustion

Abstract: Abstract

Cited by 3 publications

References 26 publications

Effect of Eu Doping on the Physical, Photoluminescence, and Photocatalytic Characteristics of ZnO Thin Films Grown by Sol–Gel Method

Effect of Eu Doping on the Physical, Photoluminescence, and Photocatalytic Characteristics of ZnO Thin Films Grown by Sol–Gel Method

The Effects of Mn Doping on the Structural and Optical Properties of ZnO

Red luminescence and UV light generation of europium doped zinc oxide thin films for optoelectronic applications

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