Effects of the additive boron on diamond crystals synthesized in the system of Fe-based alloy and carbon at HPHT

Zhang, J.Q.; Ma, Hongan; Jiang, Yanqiu; Liang, Zhongzhu; Tian, Yu; Jia, Xiaopeng

doi:10.1016/j.diamond.2006.06.005

Cited by 45 publications

(31 citation statements)

References 16 publications

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“… 14 indicate that an increase in the boron content results in a broader diamond peak as well as other impurity peaks (amorphous structures). Zhang et al 17 have also reported that the percentage of high-quality crystals of high-pressure high-temperature (HPHT) diamond continually decreased as the boron content increased.…”

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confidence: 99%

Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles

Sun

Meng

Qian

et al. 2016

Sci Rep

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A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air.

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mentioning

confidence: 99%

Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles

Sun

Meng

Qian

et al. 2016

Sci Rep

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“…Dislocations and point defects damage the electronic properties making such material useless for electronic applications. High density of point defects is observed to vary depending on the growth sectors, growth orientation and growing conditions either in HPHT or by CVD growth [1][2][3][4][5]. In gemmology, crystal colour is not fully controlled and white diamonds are difficult to obtain.…”

Section: Introductionmentioning

confidence: 98%

Multi-technique analysis of high quality HPHT diamond crystal

Fernández‐Lorenzo¹,

Araújo²,

González‐Mañas³

et al. 2012

Journal of Crystal Growth

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“…To date, there has been relatively little research on the HPHT synthesis of BDD particles 13,[16][17][18][19][20][21][22] Furthermore, of the limited studies undertaken, use of HPHT BDD as an appropriately doped electrochemical material is yet to be demonstrated. In some cases, the boron content is not quantified, 13,19 complete experimental conditions are not reported, 16,17 or the boron content is insufficient for electrochemical use. 18,21 The highest boron doping levels achieved, (1.4-2.7) × 10 21 cm -3 , have been obtained using a Mg-Zn (catalyst)-B-C system at over 1750 °C (full experimental conditions were not reported).…”

Section: Introductionmentioning

confidence: 99%

“…In this study, we determine HPHT experimental conditions which result in the synthesis of: (i) well-defined (in terms of crystallographic morphology) BDD microparticles, with (ii) sufficiently high, uncompensated, boron levels so that the material is suitable for use as an electrode, and (iii) use of the lowest P and T conditions to-date. 13,[16][17][18][19][20][21][22] We assess the material and electrochemical properties at both the single particle level and in compacted-particle, porous electrode form. To investigate porosity effects in greater detail we employ scanning electrochemical cell microscopy (SECCM).…”

Section: Introductionmentioning

confidence: 99%

High Pressure High Temperature Synthesis of Highly Boron Doped Diamond Microparticles and Porous Electrodes for Electrochemical Applications

Wood¹,

Newton²,

Shkirskiy³

et al. 2020

Preprint

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High pressure high temperature (HPHT) synthesis of crystallographically well-defined boron doped diamond (BDD) microparticles, suitable for electrochemical applications and using the lowest P and T (5.5 GPa and 1200°C) growth conditions to date, is reported. This is aided through the use of a metal (Fe-Ni) carbide forming catalyst and an aluminum dibromide (AlB2) boron source. The latter also acts as a nitrogen sequester, to reduce boron-nitrogen charge compensation effects. Raman microscopy and electrochemical measurements on individual microparticles reveal they are suitably doped to be considered metallic-like and contain negligible sp2 bonded carbon. A compaction process is used to create macroscopic porous electrodes from the BDD microparticles. Voltammetric analysis of the one-electron reduction of Ru(NH3)63+ reveals large capacitive and resistive components to the current-voltage curves, originating from solution trapped within the porous material. Scanning electrochemical cell microscopy (SECCM) is employed to map the local electrochemical activity and porosity at the micron scale. These electrodes retain the advantageous properties of polycrystalline BDD grown by chemical vapor deposition, such as large aqueous solvent window and resistance to corrosion, but with the additional benefits of a high, electrochemically accessible, surface area.

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Effects of the additive boron on diamond crystals synthesized in the system of Fe-based alloy and carbon at HPHT

Cited by 45 publications

References 16 publications

Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles

Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles

Multi-technique analysis of high quality HPHT diamond crystal

High Pressure High Temperature Synthesis of Highly Boron Doped Diamond Microparticles and Porous Electrodes for Electrochemical Applications

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