Effects of temperature on PO and resistivity of ScAlN film

Abstract

Sc doped AlN (ScAlN) films were prepared by dc reactive magnetron sputtering. The crystal quality, surface topography, cross-sectional view and the resistivity of ScAlN thin films grown on Si (100) substrates at various substrate temperatures from room temperature to 6508C have been investigated. Results show that the temperature has a significant effect on the properties of ScAlN thin films. According to the research, the crystal quality of ScAlN film first increases and then decreases, reaching the best crystalline state at 6008C. The best surface morphology and crosssectional view of ScAlN thin film was obtained at 6008C. The resistivity first increased to a maximum value of 3?36610 12 V?cm and then decreased with the temperature increasing.

Synthesis of c-axis oriented AlN thin films at room temperature

“…10,12,25,26,30,37 For AlN films, the thermodynamically favourable plane is the (002) plane because it has the lowest surface energy and it is the most densely packed basal plane. 38 The intensive ion bombardment at 150 and 175 V bias voltages increased the kinetic energy and therefore enhanced the surface mobility of the atoms resulted in the formation of c-axis oriented (002) peak. The same phenomenon is observed by Yang et al 38 while increasing the deposition temperature.…”

“…38 The intensive ion bombardment at 150 and 175 V bias voltages increased the kinetic energy and therefore enhanced the surface mobility of the atoms resulted in the formation of c-axis oriented (002) peak. The same phenomenon is observed by Yang et al 38 while increasing the deposition temperature. In their case, the necessary energy is given to the atoms by the increase in the temperature, while in our case; ion bombardment is used without increasing the deposition temperature.…”

“…(002) plane orientation with B 1 and B 2 bonds were observed at 150 and 175 V bias voltages with the increase in the kinetic energy and thus, surface mobility of the atoms. By further increasing the bias voltages, it is believed that B 2 bonds of the Al-N which is weak compared to B 1 bonds, dissociated by the excessive increase in the kinetic energies of the atoms, leading to the weakening of (002) peak and to the increase in (100) peak, as observed by Yang et al 38 and Kuang et al 9 while increasing the deposition temperature. The same approach can be considered for the appearance and the disappearance of (101), ( 102) and (103) peaks in Fig.…”

“…The nature of the B 1 bond is more covalent while that of the B 2 is more ionic. 38 At floating potential and up to 150 V bias voltage, only B 1 bonds can be observed and the films are strongly (100) plane oriented.…”

“…Two kinds of Al-N bonds exist in wurtzite AlN, named B 1 and B 2 . 9,38 The (100) plane is composed only of B 1 bonds and (002) plane is composed both of B 1 and B 2 bonds. The nature of the B 1 bond is more covalent while that of the B 2 is more ionic.…”