Effects of tellurium concentration on the structure of melt-grown ZnSe crystals

Atroshchenko, L. V.; Galkin, S. N.; Rybalka, I. A.; Voronkin, E.; Lalayants, A. I.; Ryzhikov, V. D.; Fedorov, A. I.

doi:10.1016/j.nima.2004.08.011

Cited by 4 publications

(2 citation statements)

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“…Moreover, the emission spectrum (band is peaked at ∼600 nm) is convenient for detection by highsensitivity photodiodes. Emission efficiency of this material can be improved by doping [5][6][7][8][9] and aftergrowth annealing [6,[10][11][12]. Appropriate doping and thermal treatment enhance formation of stabile centres of efficient radiative emission.…”

Section: Introductionmentioning

confidence: 99%

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Luminescence study of ZnSe based scintillators in frequency domain

Vitta¹

2008

Lithuanian J. Phys.

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Photoluminescence of ZnSe-based scintillation crystals is studied. Photoluminescence intensities and spectra of isoelectronically doped ZnSe(Te), ZnSe(O), and ZnSe(O,Al) are compared. Frequency domain luminescence lifetime measurement technique was applied to study carrier dynamics at low density of nonequilibrium carriers, which is typical for operation of high-sensitivity ZnSe-based radiation detectors. Temperature-dependent competition between donor-acceptor-pair-type and exponential luminescence decay components was observed.

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Section: Introductionmentioning

confidence: 99%

“…Appropriate doping and thermal treatment enhance formation of stabile centres of efficient radiative emission. Isoelectronic doping with tellurium has been shown to substantially enhance the emission [6,7]. Meanwhile, the influence of other isoelectronic impurities attracted still much less attention.…”

Section: Introductionmentioning

confidence: 99%