Synthesis and PL Properties of ZnSe Nanowires with Zincblende and Wurtzite Structures

Dong-Yan, Xia; Dai, Li‐Xin; Wanjin, Xu; You, Long; Bo-Rui, Zhang; Guang-Zhao, Ran; Guo-Gang, Qin

doi:10.1088/0256-307x/23/5/070

Cited by 9 publications

(2 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It seems important to note that the insertion of polytypes with long range order in III-V and II-VI NW systems is remarkably different from most of the claimed observations of polytypes in SiNWs. In III-V and II-VI NWs the different phases are generally separated by grain boundaries perpendicular to the growth direction, which we call here horizontal [1,2,24]. However, in SiNWs the polytypes are generally found in the middle of the NW and no horizontal boundary is present between the normal diamond cubic structure and the other crystal phase [13].…”

Section: Introductionmentioning

confidence: 96%

“…In III-V and II-VI NWs the different phases are generally separated by grain boundaries perpendicular to the growth direction, what we call here horizontal 1,2,24 . However in SiNWs the polytypes are generally found in the middle of the NW and no horizontal boundary is present between the normal diamond cubic structure and the other crystal phase 13 .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Hidden defects in silicon nanowires

et al. 2011

View full text Add to dashboard Cite

Recent publications have reported the presence of hexagonal phases in Si nanowires. Most of these reports were based on 'odd' diffraction patterns and HRTEM images , -'odd' means that these images and diffraction patterns could not be obtained on perfect silicon crystals in the classical diamond cubic structure. We analyze the origin of these 'odd' patterns and images by studying the case of various Si nanowires grown using either Ni or Au as catalyst in combination with P or Al doping. Two models could explain the experimental results : (i) the presence of an hexagonal phase or (ii) the presence of defects that we call 'hidden' defects because they cannot be directly observed on most images. We show that in many cases one direction of observation is not sufficient to distinguish between the two models. Several directions of observations have to be used. Secondly, conventional TEM images i.e. bright field two beam and dark field images, are of great value in the identification of 'hidden' defects. In addition, slices of nanowires perperpendicular to the growth axis can be very useful. In the studied nanowires no hexagonal phase with long range order is found and the 'odd' images and diffraction patterns are mostly due to planar defects causing superposition of different crystal grains. Finally, we show that in Raman experiments the defect rich NWs can give rise to a Raman peak shifted to 504-511 cm −1 with respect to the Si bulk peak at 520 cm −1 , indicating that Raman cannot be used to identify an hexagonal phase.

show abstract