Effects of surface reconstruction on III–V semiconductor interface formation: The role of III/V composition

Abstract

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Characterization of AlSb/InAs surfaces and resonant tunneling devices

“…We have demonstrated elsewhere that the formation of vacancy islands is a direct result of the different compositions of the clean InAs ͑0.5 ML As/0.75 ML In͒ and Sb-terminated surfaces ͑ϳ1.7 ML SbϩAs/1 ML In͒. 15 When depositing 1 ML of In during MEE, one can think of 1/4 ML of this In ''filling in'' the In missing from the original ͑2 ϫ4͒-reconstructed surface, while the other 3/4 ML remains as additional islands on the surface. Terminating this In with Sb, to complete the Sb-rich ͑1ϫ3͒-like reconstruction, leads to the observed 75%/25% bilevel surface morphology.…”

“…The primary limitation to getting a flat surface is depositing the precise amount of In which is needed. 15 We now proceed to examine the second interface-the one between the first AlSb barrier and the InAs or GaSb quantum well material. Three 5-ML-thick AlSb films were grown under different conditions, each starting on a flat, freshly prepared InSb͑As͒ surface made using 1.25 ML of In, as just described.…”

Barrier roughness effects in resonant interband tunnel diodes

“…21 Other samples were grown to examine the growth of AlSb on InAs to determine the factors required to obtain smooth barriers for resonant tunnel diodes. Detailed reports of these and related STM studies by others have already been published, [21][22][23][24][25][26][27] and notably, the growth temperature has been found to be a contributing factor in obtaining smooth AlSb barriers. This report examines the correlation of the growth temperature changes observed by STM and I -V measurements.…”

Ab Initio Study of GaSb(001)-c(2*10) and (2*10) Reconstructions

“…A central question for epitaxially grown heterostructures is the formation of the interface, especially for the non-common anion combinations GaSb/InAs or AlSb/InAs [1]. We therefore need to understand the equilibrium configuration and growth kinetics of the surface reconstructions involved to be able to explore different pathways of interface growth.…”