Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

Zaidi, Zaffar H.; Lee, K. B.; Roberts, Joseph H.T.; Guiney, Ivor; Qian, H.; Jiang, Sheng; Cheong, Jeng Shiuh; Li, P.; Wallis, D. J.; Humphreys, C. J.; Chalker, Paul R.; Houston, P.A.

doi:10.1063/1.5027822

Cited by 7 publications

(4 citation statements)

References 38 publications

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“…The reduction of the interface state density can be explained by © 2020 The Japan Society of Applied Physics 041001-4 9) which is a fairly low interface state density compared with other up-to-date reported data. 21,23,[26][27][28][29][30] Furthermore, the cost and complexity of using ODT treatment are much lower than those of in situ NH 3 /Ar/N 2 plasma treatment with a plasma-enhanced ALD-Al 2 O 3 gate dielectric.…”

Section: Resultsmentioning

confidence: 99%

Effect of surface treatment on electrical properties of GaN metal–insulator–semiconductor devices with Al₂O₃ gate dielectric

Cai¹,

Li²,

Cui³

et al. 2020

Jpn. J. Appl. Phys.

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This research proposes an economical and effective method of 1-octadecanethiol (ODT) treatment on GaN surfaces prior to Al2O3 gate dielectric deposition. GaN-based metal–insulator–semiconductor (MIS) devices treated by HCl, O2 plasma and ODT are demonstrated. ODT treatment was found to be capable of suppressing native oxide and also of passivating the GaN surface effectively; hence the interface quality of the device considerably improved. The interface trap density of Al2O3/GaN was calculated to be around 3.0 × 1012 cm−2 eV−1 for devices with ODT treatment, which is a relatively low value for GaN-based MIS devices with Al2O3 as the gate dielectric. Moreover, there was an improvement in the gate control characteristics of MIS-HEMTs fabricated with ODT treatment.

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Section: Resultsmentioning

confidence: 99%

Effect of surface treatment on electrical properties of GaN metal–insulator–semiconductor devices with Al₂O₃ gate dielectric

Cai¹,

Li²,

Cui³

et al. 2020

Jpn. J. Appl. Phys.

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“…The V-MOSFET exhibited a threshold voltage (V th ) of −18.7 V with a maximum trans-conductance (G m,max ) of 248 S cm −2 during OFF-to-ON-state sweeping, whereas, in ON-to-OFF-state transition the V th and G m,max were −15.1 V and 337 S cm −2 , respectively, with a voltage shift (ΔV th ) of ∼3.6 V. The threshold voltage shift and a difference in the value of transconductance (G m ) in double sweep condition in the transfer characteristic were possibly aroused because of the electron trapping at the oxide/semiconductor interface and/or bulk oxide traps under the positive gate bias. However, after the removal of the positive gate bias, the electrons are emitted from the traps with a delay and travel to the channel [10]. This gives rise to a quick fall in drain current density and V th shift towards positive, which lead to the difference in G m i.e., [ ] / ¶ ¶ I V D G V D under the double sweep condition.…”

Section: Resultsmentioning

confidence: 99%

“…Over the past few years, gallium nitride (GaN)-based devices have received immense attention as a promising candidate for high-power device applications for their potential material characteristics [1]. But the majority of the recent research activities are involved in the advancement of hetero-junctionbased lateral transistors to attain high current density with low ON-resistance [2][3][4][5][6][7][8][9][10]. But the breakdown voltage (V BD ) of these lateral structures have a proportional relation with the gate-to-drain distance (L GD ).…”

Section: Introductionmentioning

confidence: 99%

Epitaxial regrowth and characterizations of vertical GaN transistors on silicon

Biswas¹,

Torii²,

Yamamoto³

et al. 2019

Semicond. Sci. Technol.

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We report the fabrication of fully-vertical GaN-based metal-oxide-semiconductor field-effect transistors (V-MOSFETs) on Si. A p-GaN current aperture was introduced in the vertical device epi-structure using plasma-based dry etching and epitaxial regrowth technique to control the vertical current conduction. The fabricated V-MOSFET exhibited drain current density of 2.5 kA cm −2 with ON-resistance (R ON ) of 4.3 mΩ-cm 2 . The transfer characteristics of the device showed a peak trans-conductance (G m,max ) of 248 S cm −2 with a threshold voltage (V th ) of −18.7 V during OFF-to-ON-state sweeping. However, a blocking voltage of 36.5 V (drain current density 0.3 kA cm −2 ) was observed under an OFF-state condition of the device which needs further improvement for the high-power device applications.

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“…However, stable and uniform recess-gated GaN-based HEMT performance is still a restrictive factor in its industrialisation. At the same time, the fully recessed barrier with GaN-based HEMTs suffers from serious dielectric interface scattering, degrading channel mobility and increasing the channel resistance, which can lead to low current density and a large ONresistance [288,289]. With the ongoing development of etching technology and the continuous improvement of equipment etching accuracy, the characteristics of recess-gated GaN-based HEMTs, such as reliability and uniformity, should improve.…”

Section: Recessed Gatementioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

Cited by 7 publications

References 38 publications

Effect of surface treatment on electrical properties of GaN metal–insulator–semiconductor devices with Al₂O₃ gate dielectric

Effect of surface treatment on electrical properties of GaN metal–insulator–semiconductor devices with Al₂O₃ gate dielectric

Epitaxial regrowth and characterizations of vertical GaN transistors on silicon

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

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Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

Cited by 7 publications

References 38 publications

Effect of surface treatment on electrical properties of GaN metal–insulator–semiconductor devices with Al2O3 gate dielectric

Effect of surface treatment on electrical properties of GaN metal–insulator–semiconductor devices with Al2O3 gate dielectric

Epitaxial regrowth and characterizations of vertical GaN transistors on silicon

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

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Product

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Effect of surface treatment on electrical properties of GaN metal–insulator–semiconductor devices with Al₂O₃ gate dielectric

Effect of surface treatment on electrical properties of GaN metal–insulator–semiconductor devices with Al₂O₃ gate dielectric