2009
DOI: 10.1016/j.matlet.2009.08.054
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Effects of surface modification of the individual ZnO nanowire with oxygen plasma treatment

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Cited by 48 publications
(25 citation statements)
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“…A few approaches have been proposed that can enhance the performance of the ZnO-based UV photoconductive sensor by improving the ZnO surface condition and reducing the defects. These approaches include the use of polymer and metal surface coatings [13,[21][22][23] and plasma and chemical surface treatments [24][25][26][27][28]. These techniques facilitate efficient photogeneration processes in the ZnO under UV illumination, thereby contributing to improved performance of the device, such as a high and stable photocurrent, high sensitivity, and a fast photoresponse.…”
Section: Introductionmentioning
confidence: 99%
“…A few approaches have been proposed that can enhance the performance of the ZnO-based UV photoconductive sensor by improving the ZnO surface condition and reducing the defects. These approaches include the use of polymer and metal surface coatings [13,[21][22][23] and plasma and chemical surface treatments [24][25][26][27][28]. These techniques facilitate efficient photogeneration processes in the ZnO under UV illumination, thereby contributing to improved performance of the device, such as a high and stable photocurrent, high sensitivity, and a fast photoresponse.…”
Section: Introductionmentioning
confidence: 99%
“…The analysis shows that calcination treatment results in more separated product with well‐defined morphology as compared to the product without calcination treatment. Different morphologies of ZnO nanomaterial have been reported as nanoflakes, nanorods,, nanospheres, nanoneedles, nanowires, nanopowder, nanofilms,, nanobelts,, nanodiscs, nanoflowers and nanotubes etc. but tubes and flowers have not been reported yet through any preparation technique.…”
Section: Resultsmentioning
confidence: 99%
“…An oxygen vacancy is a donor type defect, which is different from defects that interfere with the movement of electrons and result in a decreased mobility and conductivity. Oxygen vacancies are known to play a role as electron donors in oxide nanowire channels and in the passage of current flow [15], [16], and this is assumed to be one of the main reasons for the change of the transistor characteristics. Thus, if the distribution and generation rate of the oxygen vacancies are varied by the process conditions or growth environment during the growth of the oxide nanowire, the basic characteristics of the oxide nanowire will be changed along with the transistor characteristics.…”
Section: Resultsmentioning
confidence: 99%
“…Finally, the In 2 O 3 nanowire was dispersed, and the semiconductor channels were formed. The In 2 O 3 nanowire was grown by chemical vapor deposition (CVD) using gold seeds as the catalyst [15]. The average diameter and length of the In 2 O 3 nanowires were 60 nm and 10 μm, respectively.…”
Section: F Undamental Research [1]-[3] On 1-d Nanowires Hasmentioning
confidence: 99%