Effects of substrate temperature on Bi0.8La0.2FeO3 thin films prepared by pulsed laser deposition

Gao, Feng; Qiu, Xiao‐Yang; Yin, Yuan; Xu, Bin; Wen, Yongqiang; Yuan, Fang; Lv, L. Y.; Liu, J.-M.

doi:10.1016/j.tsf.2007.01.035

Cited by 14 publications

(8 citation statements)

References 40 publications

(60 reference statements)

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“…3 ͑in-set͒, M remains nearly constant as T goes down from RT to around 70 K, below which we see an unusual rapid rising, which was attributed to the spin glass behavior. 12 Such a M-T curve is similar to that of the BFO based films and BFO ceramics, 12 which further supports our suggestion that the nanocrystalline BFO domains be responsible for the weak FM.…”

Section: Application Of Weak Ferromagnetic Bifeo 3 Films As the Photosupporting

confidence: 75%

“…11,12 In this study, the BFO films were prepared on commercial Pt/ TiO 2 / SiO 2 / Si substrates in the fixed optimized oxygen atmosphere of 10 Pa, while the substrate temperature was kept at T s = 300 or 550°C. To examine the structure of the PLD-grown BFO thin films, x-ray diffraction ͑XRD͒ and Raman spectra measurements were carried out.…”

Section: Application Of Weak Ferromagnetic Bifeo 3 Films As the Photomentioning

confidence: 99%

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Application of weak ferromagnetic BiFeO3 films as the photoelectrode material under visible-light irradiation

Chen¹,

Yu²,

Gao³

et al. 2007

Applied Physics Letters

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Bi Fe O 3 films prepared by pulsed laser deposition on Pt∕TiO2∕SiO2∕Si substrates were studied as photoelectrode for water splitting. Under visible-light irradiation, the photocurrent intensity of the polycrystalline BiFeO3 film was found to double that of the amorphous one in a three-electrode cell. The incident photon to current conversion efficiency for the polycrystalline BiFeO3 electrode was approximately 16% at 350nm and 7% at 530nm at 1.5V (versus saturated calomel electrode). The ferromagnetism of the amorphous BiFeO3 film was an order of magnitude weaker than that of the polycrystalline one, supporting the “size effect” explanation for magnetic origin.

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Section: Application Of Weak Ferromagnetic Bifeo 3 Films As the Photosupporting

confidence: 75%

Section: Application Of Weak Ferromagnetic Bifeo 3 Films As the Photomentioning

confidence: 99%

Application of weak ferromagnetic BiFeO3 films as the photoelectrode material under visible-light irradiation

Chen¹,

Yu²,

Gao³

et al. 2007

Applied Physics Letters

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“…A sudden increase in leakage current for PMN-PT-2Fe thin film annealed at 700 °C was attributed to the abnormal big grain. The shortened grain boundaries accompanied by the big grain provided shorter leakage current path [25]. Figure 4a shows the leakage current density-voltage (J-V) curves of PMN-PT-2Fe thin films as a function of annealing temperature from 600 to 700 • C. It can be seen that the curves of all thin films exhibit asymmetry between positive and negative applied voltage, which might be attributed to the different interface states between top Au/PMN-PT-2Fe thin film and bottom Pt/PMN-PT-2Fe thin film.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Feng

Liu

et al. 2021

Nanomaterials

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Fe-doped 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) thin films were grown in Pt/Ti/SiO2/Si substrate by a chemical solution deposition method. Effects of the annealing temperature and doping concentration on the crystallinity, microstructure, ferroelectric and dielectric properties of thin film were investigated. High (111) preferred orientation and density columnar structure were achieved in the 2% Fe-doped PMN-PT thin film annealed at 650 °C. The preferred orientation was transferred to a random orientation as the doping concentration increased. A 2% Fe-doped PMN-PT thin film showed the effectively reduced leakage current density, which was due to the fact that the oxygen vacancies were effectively restricted and a transition of Ti4+ to Ti3+ was prevented. The optimal ferroelectric properties of 2% Fe-doped PMN-PT thin film annealed at 650 °C were identified with slim polarization-applied field loops, high saturation polarization (Ps = 78.8 µC/cm2), remanent polarization (Pr = 23.1 µC/cm2) and low coercive voltage (Ec = 100 kV/cm). Moreover, the 2% Fe-doped PMN-PT thin film annealed at 650 °C showed an excellent dielectric performance with a high dielectric constant (εr ~1300 at 1 kHz).

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“…The leakage current of thin films is not only affected by the deposition rate but also by the substrate temperature. The effect of substrate temperature on the properties of Bi 0.8 La 0.2 FeO 3 (BLF) thin films was investigated by Gao et al [136] Figure 5c shows the leakage current J of the BLF film versus the applied voltage V at different substrate temperatures. It can be seen that the leakage current density of the film increases with the increase of the substrate temperature for a given voltage.…”

Section: Pulsed Laser Depositionmentioning

confidence: 99%

Perovskite Oxide Ferroelectric Thin Films

Tian

Yang

2022

Adv Elect Materials

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be roughly divided into perovskite-type, lithium niobate type, tungsten bronze type, potassium dihydrogen phosphate type, triglycine sulphate type, Rochelle salt, ferroelectric liquid crystal, and ferroelectric polymer. Among these ferroelectric thin film materials, perovskite ferroelectric films and ferroelectric polymer films are relatively well-studied films. The outstanding ductility and flexibility of ferroelectric polymer films like polyvinylidene fluoride (PVDF) have made them popular in flexible electrical devices. [7][8][9] However, some disadvantages of ferroelectric polymer films, such as low polarization strength, large coercive field, slow switching speed, and poor temperature resistance limit their application in fields including ferroelectric memory, piezoelectric energy harvesting or sensors. [10][11][12] To apply them to these fields, they need to be appropriately combined with perovskite oxide materials to improve their ferroelectric properties. For example, some researchers doped 0.5((Ba 0.7 Ca 0.3 )TiO 3 )-0.5(Ba(Zr 0.2 Ti 0.8 ) O 3 ) (BCZT) ceramic particles into PVDF to make BCZT/PVDF composite film. PVDF is a semicrystalline ferroelectric polymer, doping it with BCZT improves its crystallinity and hence its dielectric constant. The dielectric constants of the γ-PVDF phase and α-PVDF phase in pure PVDF films are ≈10 and 7.5. After doping with BCZT, the dielectric constants increase to 31 and 20, which improves the ferroelectric properties of PVDF. [13] There are many other examples of enhancing the ferroelectric properties of PVDF films by doping with perovskite oxides. [14][15][16][17][18][19][20] Obviously, enhancing the ferroelectric properties of PVDF by this method will make the preparation process relatively tedious and is not conducive to mass production. It is not as convenient as growing perovskite ferroelectric films directly on flexible substrates. In addition, polymers' poor temperature resistance limits their utilization compared to ferroelectric oxide thin film materials' superior temperature resistance and physical properties. The composite dielectric film composed of BiFeO 3 (BFO) and SrTiO 3 (STO) has a reversible energy storage density (U e ) of about 70 J cm −3 at room temperature and can operate stably between −60 and 100 °C. [21] BaZr 0.35 Ti 0.65 O 3 (BZT) has a U e of 78.7 J cm −3 at room temperature and can work stably between −150 and 200 °C, and the U e still exceeds 40 J cm −3 at 200 °C. [22] But polymer-based ferroelectric materials often cannot be applied at high temperatures and have a low energy storage density (<40 J cm −3 ). [23,24] The high temperature special design can meet the temperature requirements, but the dielectric properties need more optimization. [25,26] The spontaneous polarization of BaTiO 3 (BTO) is about 25 µC cm −2 , [27] and the spontaneous polarization of stress-modulated BTO Perovskite oxide thin film materials are used in various fields of human life due to their excellent physical properties. The high performance thin films in turn prov...

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Effects of substrate temperature on Bi0.8La0.2FeO3 thin films prepared by pulsed laser deposition

Cited by 14 publications

References 40 publications

Application of weak ferromagnetic BiFeO3 films as the photoelectrode material under visible-light irradiation

Application of weak ferromagnetic BiFeO3 films as the photoelectrode material under visible-light irradiation

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Perovskite Oxide Ferroelectric Thin Films

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