A multiferroic heterostructure composed of (Bi 0:875 Nd 0:125 )FeO 3 (BNF) are grown on (Ba 0:65 Sr 0:35 )TiO 3 (BST) buffered Pt/Ti/SiO 2 / Si(100) substrate by rf-magnetron sputtering. The heterostructure BNF/BST exhibits a quite low leakage current (3:7 Â 10 À7 A/cm 2 at 300 kV/cm) and dielectric loss (0.0036 at 100 kHz) at room temperature. The saturated magnetization and the coercive field of the BST/BNF heterostructure are 37.7 emu/cm 3 and 357.6 Oe, respectively. The low leakage current owed to the action of BST in the charge transfer between BNF and the bottom electrode, the coupling reaction between BST and BNF films. And the better crystallization in BNF/BST heterostructure thin film lead to the ferromagnetic properties enhanced.Multiferroic (MF) material possess both ferroelectric order and ferromagnetic (or antiferromagnetic) order in the same phase. BiFeO 3 (BFO) is one of the most extensively studied MF materials because of its promising magnetoelectric application at room temperature. 1À3 Due to high T N and T C that outclass the room temperature, BFO has been fascinating since it was first synthesized in the late 1950s. However, BFO becomes unsuitable for applications owing to its large leakage current due to the oxygen vacancies and Fe 2þ in the samples. 3,4 Using Nd 3þ ions in substitution for larger Bi 3þ ions in the BFO composition, could improve ferromagenetic properties. 5,6 Usually, improvement of leakage and ferroelectric properties of BFO thin films by doping Zr and Ru substitution, codoping La and Ni, codoping La and Nb, codoping Ru and La, or codoping Mn and Ti atoms, but the leakage current density is still higher than 10 À4 A/cm 2 at high electric field of 300 kV/cm. 7À14 Owed to the low leakage current, high dielectric constant and weak ferroelectric properties, (Ba,Sr)TiO 3 is extensive application in electronic devices. 15,16 In order to reducing the leakage current and dielectric loss, and improving the ferromagnetic properties in MF materials, may be achieved by a combination of MF materials with (Ba,Sr)TiO 3 thin films. Murari et al. reported chemical solution deposited BFO thin film on paraelectric cubic Sr-rich (Ba 0:25 Sr 0:75 )TiO 3 buffered Pt/TiO 2 /SiO 2 /Si(100) substrates, 17 but the leakage current and dielectric loss of this thin film still remain a high degree. The weak ferroelectric perovskite (Ba 0:65 Sr 0:35 )TiO 3 has high dielectric constant and low leakage current, and a good lattice math with (Bi 0:875 Nd 0:125 )FeO 3 (BNF) film. In this work, therefore, we propose weak ferroelectric perovskite (Ba 0:65 Sr 0:35 )TiO 3 as buffer-layer, reduced the leakage and dielectric loss, enhanced the ferromagnetic properties in Nd-doped BiFeO 3 thin films.The (Bi 0:875 Nd 0:125 )FeO 3 (BNF), Ba 0:65 Sr 0:35 TiO 3 (BST) and heterostructure BNF/BST thin films were grown on Pt/ Ti/SiO 2 /Si(100) substrates using rf-magnetron sputtering with ceramic targets of BST and BNF. These ceramics prepared details were described elsewhere. 18,19 When depositing the BST and BNF thin film...