Effects of substrate material on carbon films grown by laser molecular beam epitaxy

Liu, M.; Xu, Xiaodong; Man, Baoyuan; Kong, D.M.; Xu, Shicai

doi:10.1016/j.apsusc.2012.09.062

Cited by 3 publications

(2 citation statements)

References 30 publications

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“…1 h shows the existence of graphene. Our SAED patterns are comparable with others [20, 21]. Therefore, we successfully obtained the epitaxial graphene films through decreasing the deposition time to 100 pulses.…”

Section: Resultssupporting

confidence: 88%

Epitaxial growth of graphene thin film by pulsed laser deposition

Wang

Xiong

et al. 2015

Micro & Nano Letters

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Epitaxial graphene films have been prepared by pulsed laser deposition. X-ray photoelectron spectroscopy analysis shows that the carbon binding energy is 284.7 eV, corresponding to sp 2-C. Raman spectroscopy indicates that there exists 2D and D peaks and thus graphene structures have been formed. Meanwhile, according to high-resolution transmission electron microscopy analysis, suitable depositing temperature for graphene films is found to be 873 K and the single oriented crystal domains of graphene are observed only with the condition of 100 pulses laser.

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Section: Resultssupporting

confidence: 88%

Epitaxial growth of graphene thin film by pulsed laser deposition

Wang

Xiong

et al. 2015

Micro & Nano Letters

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“…The detailed growing process was reported in our previous report [12]. The BMN thin films were deposited on graphene/Cu foil using LMBE method [16]. The growing ambient was a mixture of Ar and O 2 with the O 2 /Ar mixing ratio of 1:5.…”

Section: Methodsmentioning

confidence: 99%

Graphene-Based Flexible and Transparent Tunable Capacitors

Man

Jiang

et al. 2015

Nanoscale Res Lett

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We report a kind of electric field tunable transparent and flexible capacitor with the structure of graphene-Bi1.5MgNb1.5O7 (BMN)-graphene. The graphene films with low sheet resistance were grown by chemical vapor deposition. The BMN thin films were fabricated on graphene by using laser molecular beam epitaxy technology. Compared to BMN films grown on Au, the samples on graphene substrates show better quality in terms of crystallinity, surface morphology, leakage current, and loss tangent. By transferring another graphene layer, we fabricated flexible and transparent capacitors with the structure of graphene-BMN-graphene. The capacitors show a large dielectric constant of 113 with high dielectric tunability of ~40.7 % at a bias field of 1.0 MV/cm. Also, the capacitor can work stably in the high bending condition with curvature radii as low as 10 mm. This flexible film capacitor has a high optical transparency of ~90 % in the visible light region, demonstrating their potential application for a wide range of flexible electronic devices.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-015-0974-4) contains supplementary material, which is available to authorized users.

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Layered MoS₂ grown on c ‐sapphire by pulsed laser deposition

Hao

Luong

et al. 2015

Physica Rapid Research Ltrs

138

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Layered growth of molybdenum disulphide (MoS2) was successfully achieved by pulsed laser deposition (PLD) method on c ‐plane sapphire substrate. Growth of monolayer to a few monolayer MoS2, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A1g–E12g) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm–1, suggesting a monolayer MoS2 was obtained. Two‐dimensional (2D) layer growth of MoS2 is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross‐sectional view of transmission electron microscopy (TEM). The in‐plane relationship, (0006) sapphire//(0002)MoS2and [21̄1̄0] sapphire//[01̄1̄0]MoS2 is determined. The results imply that PLD is suitable for layered MoS2 growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS2, analysed by X‐ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Effects of substrate material on carbon films grown by laser molecular beam epitaxy

Cited by 3 publications

References 30 publications

Epitaxial growth of graphene thin film by pulsed laser deposition

Epitaxial growth of graphene thin film by pulsed laser deposition

Graphene-Based Flexible and Transparent Tunable Capacitors

Layered MoS₂ grown on c ‐sapphire by pulsed laser deposition

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Effects of substrate material on carbon films grown by laser molecular beam epitaxy

Cited by 3 publications

References 30 publications

Epitaxial growth of graphene thin film by pulsed laser deposition

Epitaxial growth of graphene thin film by pulsed laser deposition

Graphene-Based Flexible and Transparent Tunable Capacitors

Layered MoS2 grown on c ‐sapphire by pulsed laser deposition

Contact Info

Product

Resources

About

Layered MoS₂ grown on c ‐sapphire by pulsed laser deposition