Layered MoS<sub>2</sub> grown on <i>c</i> ‐sapphire by pulsed laser deposition

Ho, Yen Teng; Hao, Chun; Luong, Tien Tung; Wei, Lin; Yen, Tzu Chun; Hsu, Wei-Ting; Chang, Wen‐Hao; Chu, Yung Ching; Tu, Yung Yi; Pande, Kanchan; Chang, Edward Yi

doi:10.1002/pssr.201409561

Cited by 138 publications

(93 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Growth of large-area MoS2 has been demonstrated primarily using chemical vapor deposition (CVD) technique [18][19][20][21]. Vacuum-based methods such as pulsed laser deposition (PLD) [22][23][24], and magnetron sputtering [25] have also displayed promise. Also many applications necessitates that the TMDs be compatible with a wide variety of substrates, apart from large-area growth.…”

Section: Introductionmentioning

confidence: 99%

Viable route towards large-area 2D MoS₂using magnetron sputtering

et al. 2017

View full text Add to dashboard Cite

Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BNbuffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS2 properties. Few layers of MoS2 are established using X-ray reflectivity, diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specific modeling of optical constants shows very good agreement with first-principles calculations. Conductivity measurements reveal that few-layer MoS2 films are more conducting than many-layer films.Photo-conductivity measurements reveal that the sputter deposited MoS2 films compare favorably with other large-area methods. Our work illustrates that sputtering is a viable route for large-area device applications using transition metal dichalcogenides.

show abstract

Section: Introductionmentioning

confidence: 99%

Viable route towards large-area 2D MoS₂using magnetron sputtering

et al. 2017

View full text Add to dashboard Cite

show abstract

“…The first step is the deposition of precursor material MoO 3 on the c ‐sapphire by E‐gun. Compared with the MoO 3 films prepared by other deposition methods, such as sputtering and pulsed laser deposition, the MoO 3 film deposited by E‐gun exhibits larger area, high uniformity, and adjustable thickness, which guarantees the synthesis of wafer‐scale and high‐quality MoS 2 films in the second step. The second step is the sulfurization process of MoO 3 by H 2 S and Ar gaseous mixture.…”

Section: Resultsmentioning

confidence: 99%

Layer‐Dependent Dielectric Function of Wafer‐Scale 2D MoS₂

Song

Fang

Chen

et al. 2018

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

layer-dependent bandgap, [10] valley selective circular dichroism, [11] high on/off ratio, [12] and high thermostability [12] of the 2D MoS 2 . The performance of these novel devices significantly depends on the intrinsic optical properties (especially the dielectric function) of the 2D MoS 2 , which exhibit an intriguing layer dependency due to the enhanced quantum confinement effect and the absence of inversion symmetry. Therefore, the effective characterization of the layer-dependent optical properties of MoS 2 is critical for the performance improvement and the optimal design of those photoelectric devices based on MoS 2 .Layer-dependent optical properties of MoS 2 , including absorbance, [1] photoluminescence spectra, [10] Raman spectra, [13] and second-harmonic generation effect, [14] have been measured and discussed previously. However, these studies can hardly gain the basic optical constants, such as dielectric function, complex refraction index, etc., which play an important role in the quantitative design and optimization of those MoS 2 -based photoelectric devices. [15] Beyond these researches, there are also some reports on the dielectric function of the 2D MoS 2 , where the techniques they used can be roughly divided into three types: ellipsometry, [16][17][18][19][20][21][22][23][24][25][26] reflection (or absorption) spectrum method, [27,28] and contrast spectrum or differential reflection (or transmission) spectrum method. [29,30] By using of ellipsometry, Li et al. investigated the optical properties of the monolayer and bulk MoS 2 , and identified some critical points (CPs) in their dielectric function spectra. [22] The frequency-dependent reflection (transmission) spectra and corresponding differential spectra of the monolayer MoS 2 were simultaneously measured by Morozov et al., then the dielectric function was extracted. [27] Li et al. measured the reflection spectra of the mechanical exfoliation monolayer MoS 2 flake and the bulk MoS 2 , then their dielectric functions were calculated combined with a Kramers-Kronig constrained variational analysis. [28] Nevertheless, these published experimental reports on the dielectric function of MoS 2 mainly focus on the monolayer and bulk counterpart and the spectral range is relatively narrow. Apart from these experimental studies, some researchers have also devoted to predict the dielectric properties of the 2D MoS 2 with the help of theoretical calculations. [31,32] For example, Johari et al. studied the dielectric properties of monolayer, bilayer, and bulk MoS 2 by computing the electron Wafer-scale, high-quality, and layer-controlled 2D MoS 2 films on c-sapphire are synthesized by an innovative two-step method. The dielectric functions of MoS 2 ranging from the monolayer to the bulk are investigated by spectroscopic ellipsometry over an ultra-broadband (0.73-6.42 eV). Up to five critical points (CPs) in the dielectric function spectra are precisely distinguished by CP analysis, and their physical origins are identified in the band structures with ...

show abstract

“…The first two peaks (228.3 and 231.9 eV) are attributed to the doublet Mo 3d 5/2 and Mo 3d 3/2 , respectively, correlating to Mo 4+ state in MoS 2 (typical of the Mo-S bond). The third peak of Mo 3d 5/2 at 235.1 eV is attributed to the Mo 6+ state of MoO 3 , typical of the Mo-O bond [50]- [52]. The formation of this kind of bond has been reported elsewhere [18], [51], [53], [54], and suggests strong chemical and electronic coupling between the MoS 2 and rGO NSs in the synthesized samples.…”

Section: Resultsmentioning

confidence: 54%

Simple and Fast Approach for Synthesis of Reduced Graphene Oxide–MoS₂ Hybrids for Room Temperature Gas Detection

Kumar

Dias

Rubira

et al. 2018

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

The combination of two highly versatile materials as reduced graphene oxide (rGO) and molybdenum disulfide (MoS 2 ) forms the layered rGO-MoS 2 hybrids that have great potential for sensing applications. In this paper, we developed a cost-effective, time-saving, and efficient microwave-assisted method to exfoliate rGO and MoS 2 nanosheets in a powder mixture for the formation of rGO-MoS 2 hybrids. The formation of hybrids with a combination of organic and inorganic 2-D layered materials offers new possibilities for the development of gas sensitive materials. The applied microwave treatment is a simple and fast process for the large-scale synthesis of rGO-MoS 2 hybrids. The synthesized rGO-MoS 2 hybrids were characterized by X-ray diffraction, scanning electron microscope, energy dispersive X-ray spectroscopy, Raman, X-ray photoelectron spectroscopy, and thermogravimetric analyses to determine the phase structure, surface morphology, defect formation, binding energy, thermal stability and so on. The synthesized rGO-MoS 2 hybrids were tested for sensing application and showed the good performance to detect gases such as O 2 , N 2 , and NH 3 at room temperature.

show abstract

Layered MoS₂ grown on c ‐sapphire by pulsed laser deposition

Cited by 138 publications

References 26 publications

Viable route towards large-area 2D MoS₂using magnetron sputtering

Viable route towards large-area 2D MoS₂using magnetron sputtering

Layer‐Dependent Dielectric Function of Wafer‐Scale 2D MoS₂

Simple and Fast Approach for Synthesis of Reduced Graphene Oxide–MoS₂ Hybrids for Room Temperature Gas Detection

Contact Info

Product

Resources

About

Layered MoS2 grown on c ‐sapphire by pulsed laser deposition

Cited by 138 publications

References 26 publications

Viable route towards large-area 2D MoS2using magnetron sputtering

Viable route towards large-area 2D MoS2using magnetron sputtering

Layer‐Dependent Dielectric Function of Wafer‐Scale 2D MoS2

Simple and Fast Approach for Synthesis of Reduced Graphene Oxide–MoS2 Hybrids for Room Temperature Gas Detection

Contact Info

Product

Resources

About

Layered MoS₂ grown on c ‐sapphire by pulsed laser deposition

Viable route towards large-area 2D MoS₂using magnetron sputtering

Viable route towards large-area 2D MoS₂using magnetron sputtering

Layer‐Dependent Dielectric Function of Wafer‐Scale 2D MoS₂

Simple and Fast Approach for Synthesis of Reduced Graphene Oxide–MoS₂ Hybrids for Room Temperature Gas Detection