Effects of Sn doping on the growth morphology and electrical properties of ZnO nanowires

Kim, Soon-Jae; Na, Sekwon; Jeon, Haseok; Kim, Sun-Ho; Lee, Byunghoon; Yang, Jae-Hyun; Kim, Hyoungsub; Lee, Hoo-Jeong

doi:10.1088/0957-4484/24/6/065703

Cited by 13 publications

(10 citation statements)

References 17 publications

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“…Without the use of proper analytical methodology and failing to study the previous work on Sn-rich IBs, Cao et al [55] concluded that IBs in their SnO 2 (ZnO:Sn) m nanowires are fully occupied by Sn. Similar conclusions were drawn a year later by Park et al [56], followed by three further studies [57][58][59], where Tan et al [59] nicely shows an intensity undulation in HAADF-STEM image indicating that the IB-layer is probably not fully occupied by Sn. On the other hand, it is great to read the studies by Eichhorn et al [60] and Hoemke et al [63] that have built on this knowledge and constructed fascinating modulated structures with parallel Sn-rich basal-plane IBs making use of either Ga 2 O 3 or Al 2 O 3 additions to stabilize the transient tail-to-tail configuration inbetween, respectively.…”

Section: Local Chemistry Of the Sn-rich Ibssupporting

confidence: 71%

“…Similar conclusions were made by other authors [53,54]. Observation of IBs in Sn-doped ZnO nanobelts and nanowires was followed by highly competitive studies of their atomic structure using scanning transmission electron microscopy (STEM) methods [55][56][57][58][59]. While most of these studies correctly interpret the translation state of Sn-rich IBs, their lack in understanding of the local charge balance [15] is reflected in erroneous interpretation of the occupancy and arrangement of Sn atoms in the IB-plane.…”

Section: Introductionsupporting

confidence: 56%

“…When studying Sn-rich IBs at high resolution, we realize that all important contrast features are averaged out in crystal foils thicker than ~10 nm. This problem also appears to be the main obstacle in solving the cation distribution in Sn-rich IBs by other authors [55][56][57][58][59], where only the latest work shows some contrast variations along the IB-plane in [011 -0] projection. Why this appears to be such a problem?…”

Section: Cation Distribution In the Sn-rich Ibsmentioning

confidence: 99%

“…While it is generally known that Sn alone cannot produce a stable tail-to-tail inversion [10] further deficiency in these studies is seen in their knowledge on stabilization of parallel Snrich IBs. Not being aware of contamination with Ga [55], In [57], Si [58] or Al [59] in their experiments, they report on growing pure polytypoidic SnO 2 (ZnO:Sn) m nanowires, instead of fully characterizing these fascinating mixed homologous phases with potentially interesting physical properties. Namely, in addition to Fe and Ti, these dopants are known to stabilize tail-to-tail configuration of IBs [60][61][62][63][64][65], enabling growth of mixed homologous structures with Sn-rich IBs, as this was clearly demonstrated by Eichhorn et al [60] and Hoemke et al [63] for gallium and aluminum additions.…”

Section: Introductionmentioning

confidence: 99%

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TEM and DFT study of basal-plane inversion boundaries in SnO2-doped ZnO

et al. 2021

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In our recent study (Ribic et al. 2020) we reported the structure of inversion boundaries (IBs) in Sb2O3-doped ZnO. Here, we focus on IBs that form in SnO2-doped ZnO. Using atomic resolution scanning transmission electron microscopy (STEM) methods we confirm that in SnO2-doped ZnO the IBs form in head-to-head configuration, where ZnO4 tetrahedra in both ZnO domains point towards the IB plane composed of a close-packed layer of octahedrally coordinated Sn and Zn atoms. The in-plane composition is driven by the local charge balance, following Pauling's principle of electroneutrality for ionic crystals, according to which the average oxidation state of cations is 3+. To satisfy this condition, the cation ratio in the IB-layer is Sn4+: Zn2+=1:1. This was confirmed by concentric electron probe analysis employing energy dispersive spectroscopy (EDS) showing that Sn atoms occupy 0.504 ? 0.039 of the IB layer, while the rest of the octahedral sites are occupied by Zn. IBs in SnO2-doped ZnO occur in the lowest energy, IB3 translation state with the cation sublattice expansion of ?IB(Zn-Zn) of +91 pm with corresponding O-sublattice contraction ?IB(O-O) of -46 pm. Based on quantitative HRTEM and HAADF-STEM analysis of in-plane ordering of Sn and Zn atoms, we identified two types of short-range distributions, (i) zigzag and (ii) stripe. Our density functional theory (DFT) calculations showed that the energy difference between the two arrangements is small (~6 meV) giving rise to their alternation within the octahedral IB layer. As a result, cation ordering intermittently changes its type and the direction to maximize intrinsic entropy of the IB layer driven by the in-plane electroneutrality and 6-fold symmetry restrictions. A long-range in-plane disorder, as shown by our work would enhance quantum well effect to phonon scattering, while Zn2+ located in the IB octahedral sites, would modify the bandgap, and enhance the in-plane conductivity and concentration of carriers. Keywords

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Section: Local Chemistry Of the Sn-rich Ibssupporting

confidence: 71%

Section: Introductionsupporting

confidence: 56%

Section: Cation Distribution In the Sn-rich Ibsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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TEM and DFT study of basal-plane inversion boundaries in SnO2-doped ZnO

et al. 2021

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“…Although this strategy provides a direct measurement of single or crossed nanofibers, scaling up to characterize a statistically nanofiber network is a difficult trouble. Recently, Kim et al [28] designed a hybrid film from nanowire network and conductive sol-gel solution to assess the electrical properties of network. Inspired by this work, we fabricated thin sheets from ITO nanofiber networks for electrical properties measurement in our work.…”

Section: Introductionmentioning

confidence: 99%

Effects of Sn doping on the morphology, structure, and electrical property of In2O3 nanofiber networks

Wang

Bin

2014

Appl. Phys. A

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This paper studies the effect of Sn doping on the morphological, structural, and electrical properties of the Sn-doping In 2 O 3 nanofiber networks. In 2 O 3 -based nanofibers with various relative concentration of Sn precursor (0-20 mol%) were fabricated through the electrospinning method. Scanning electron microscopy observations show that, depending on the relative concentration of SnCl 4 in the starting materials, the doped nanofibers with different morphologies, from smooth to corn-like and then to accidented, are fabricated. Transmission electron microscopy and X-ray diffraction analyses reveal that the Sn dopants influence the growth direction of seeds, resulting in doped nanoparticles having diverse shapes and sizes, which are critical for the formation of doped nanofiber with different morphology. From these nanofiber networks, we fabricated several thin sheets to characterize the effect of Sn concentration on the electrical resistivity. The resistivity of thin sheets decreased significantly before the doping concentration up to 12.5 mol%, and then increased slightly at a larger addition. This work will assist further understanding the formation of Sn-doped In 2 O 3 nanofibers and is expected to be extended to other transparent conductive oxides.

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Dopant‐Free Twinning Superlattice Formation in InSb and InP Nanowires

Yuan

Guo

Caroff

et al. 2017

Physica Rapid Research Ltrs

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Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III–V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au‐catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III–V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering.

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Effects of Sn doping on the growth morphology and electrical properties of ZnO nanowires

Cited by 13 publications

References 17 publications

TEM and DFT study of basal-plane inversion boundaries in SnO2-doped ZnO

TEM and DFT study of basal-plane inversion boundaries in SnO2-doped ZnO

Effects of Sn doping on the morphology, structure, and electrical property of In2O3 nanofiber networks

Dopant‐Free Twinning Superlattice Formation in InSb and InP Nanowires

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