Effects of Sn doping on the optoelectronic properties of reactively evaporated In4Se3 thin films

Anuroop, R.; Pradeep, B.

doi:10.1016/j.mssp.2019.03.020

Cited by 2 publications

(2 citation statements)

References 57 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As far as the bandgap is concerned, a wide dispersion of the experimental values exist. Direct optical bandgaps of 1.24 eV, 1.48 eV and 1.68 eV are reported in polycrystalline In 4 Se 3 [14][15][16], counterbalanced by much lower values of 0.42 eV [2] or 0.65 eV [17]. The extensive work by Fukutani et al [18] led to an estimate of E g = 0.86 ± 0.05 eV at T = 15 K from trustworthy high-resolution angle-resolved photoemission spectroscopy performed on a single crystal.…”

Section: Introductionmentioning

confidence: 96%

“…The favorable growth conditions are a substrate temperature ranging from T s = 300 • C to 450 • C and a low ratio of the beam equivalent partial pressures R = P Se /P In , classically less than 2. Finally, single phase In 4 Se 3 polycrystalline thin films were grown by the flash evaporation of stoichiometric powder at T = 450 K [14,15] and by reactive evaporation on glass substrates at T = 550 K [16].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Determination of the direct bandgap value in In₄Se₃ thin films

Brucker¹,

Moret²,

Gil³

et al. 2022

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

The value and the nature of the bandgap of In4Se3 are still not well deﬁned, with a large spread of the experimental data between 0.42 eV and 1.68 eV and an uncertain nature, predicted to be indirect by ab initio band structure calculations. Here we report on the optical transmission and photoluminescence performed in In4Se3 thin ﬁlms grown by coevaporation on (0001)-oriented sapphire wafers. The quality of the polycristalline layers allows the ﬁrst detection of the excitonic-like transition in the optical absorption of this compound at low temperature. The photoluminescence detected under weak laser excitation shows a bound exciton emission at 0.75 eV. Strong laser irradiation reveals a quadratic dependence of the photoluminescence intensity on the optical excitation, which demonstrates a stimulated emission at 0.79 eV in relation with an exciton-exciton scattering process. On the basis of a reasonable estimate of the exciton energy, equal to 10-15 meV, we evaluate the direct bandgap of In4Se3 to 0.82±0.01 eV at low temperature.

show abstract