Effects of SF6/Ar gas-mixing ratio on the etching behavior and properties of BZN thin films

Dai, Li; Zhang, G.J.; Wang, S.Y.; Zhong, Zhiqin; Wang, G.

doi:10.1016/j.apsusc.2012.04.134

Cited by 5 publications

(3 citation statements)

References 18 publications

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“…On the other hand, the peak shift of Ga 2p is small (0.3 eV). If there is a GaF bond, the Ga 2p peak should appear at ≈2.7 eV higher than the GaO bond, but in Figure S5c (Supporting Information) there is no GaF‐related peak. It is reasonable to assume that In and Zn are bonded with F. Therefore, the improvement is correlated with bonding of metal (In and Zn) with F at the a‐IGZO top interface.…”

Section: Resultsmentioning

confidence: 99%

Top Interface Engineering of Flexible Oxide Thin‐Film Transistors by Splitting Active Layer

Lee

Shin

Jang

2017

Adv Funct Materials

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The effect of active layer (amorphous indium–gallium–zinc oxide, a‐IGZO) splitting on the performances of back‐channel‐etched (BCE) and etch‐stopper (ES) thin‐film transistors (TFTs) on polyimide substrate is studied. While the performance of BCE TFT is independent of active layer splitting, the performance of ES TFT is improved significantly by splitting the active layer into 2–4 µm width along the channel. The saturation mobility is enhanced from 24.3 to 76.8 cm2 V−1 s−1 and this improvement is confirmed by the operation of a ring oscillator made of the split TFTs also. X‐ray photoelectron spectroscopy (XPS) analysis of the split a‐IGZO indicates the incorporation of F at the island interface and thus improves the top interface quality, leading to a significant improvement of the top channel TFT mobility from 0.25 to 24.22 cm2 V−1 s−1. This improvement is correlated with bonding of In with F at the top interface according to XPS results. The bias stability, hysteresis, and mechanical stability of the ES a‐IGZO TFT are also remarkably improved by splitting a‐IGZO active layer.

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Section: Resultsmentioning

confidence: 99%

Top Interface Engineering of Flexible Oxide Thin‐Film Transistors by Splitting Active Layer

Lee

Shin

Jang

2017

Adv Funct Materials

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“…On the other hand, the peak shift of Zn 2p was small (0.3 eV). If there is a Zn-F bond, the Zn 2p peak should appear at an energy that is 0.6-1.5 eV higher than the Zn-O bond, 21 but Fig. 2c does not show these Zn-F-related peaks.…”

Section: N19mentioning

confidence: 94%

Effect of Fluorine in a Gate Insulator on the Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistors

Yamazaki¹,

Ishikawa²,

Fujii³

et al. 2016

ECS J. Solid State Sci. Technol.

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Reliability improvement mechanism using a fluorinated silicon nitride (SiNx:F) gate insulator (GI) was investigated. X-ray photoelectron spectroscopy analysis was performed focusing on bonding state of metals (In, Ga, Zn), in order to reveal the effect of fluorine in SiNx:F on bonding state at the interface between SiNx:F and a-InGaZnO. Our analysis clarified that the In-Fx and In-OF bonding states were formed at the a-InGaZnO/GI interface, leading to reducing the number of tail states near conduction band minimum. The behavior of time evolution of threshold voltage shift under positive-bias current stress (PBCS) was described by stretched-exponential equation. The result of PBCS assumed us that the a-InGaZnO TFTs with SiNx:F GI has fewer negatively charged deep trap and form more ordered interface with few tail state which originated in In was formed, leading to highly reliable a-InGaZnO TFT.

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“…14 The residues can be formed by metal mask, Al electrode, polymer (SiO x F y ), metal fluoride and so on. [15][16][17][18][19] We call this phenomenon the micromasking effect. Several approaches to prevent or eliminate residue formation are reported.…”

Section: Introductionmentioning

confidence: 99%

Crystal structure induced residue formation on 4H-SiC by reactive ion etching

et al. 2016

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The (0001¯) C face of 4H-SiC wafer was etched by reactive ion etching in SF6/O2 plasma. The effect of etching parameters, such as work pressure, SF6:O2 ratio and etching time, on the residue formation were systematically investigated. The residue morphologies were observed by scanning electron microscopy and atomic force microscopy, respectively. The residues have spike shape and their facets are defined as {11¯02¯} crystal planes. They are formed at beginning of the etching and no new spikes are generated as prolonging etching time. Both work pressure and SF6:O2 ratio play significant role in the spike formation. The residues can be eliminated completely by increasing the SF6:O2 ratio and work pressure. On the basis of experimental results and of 4H-SiC crystal structure, the spike formation model is proposed.

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Effects of SF6/Ar gas-mixing ratio on the etching behavior and properties of BZN thin films

Cited by 5 publications

References 18 publications

Top Interface Engineering of Flexible Oxide Thin‐Film Transistors by Splitting Active Layer

Top Interface Engineering of Flexible Oxide Thin‐Film Transistors by Splitting Active Layer

Effect of Fluorine in a Gate Insulator on the Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistors

Crystal structure induced residue formation on 4H-SiC by reactive ion etching

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