2006
DOI: 10.1016/j.apsusc.2006.03.020
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Effects of sapphire substrate annealing on ZnO epitaxial films grown by MOCVD

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Cited by 24 publications
(10 citation statements)
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“…Epitaxial growth of thin ZnO films growing on Al 2 O 3 substrates at atmospheric pressure by MOCVD has also been reported by several authors for similar conditions [37,38]. The simulated film grew with the main crystallographic c-axis parallel to the (0 0 0 1) Al 2 O 3 substrate, which was also observed by the films deposited by MOCVD at temperature of 773 K [39,40]. The prevalence of c-axis oriented ZnO films has also been observed by other deposition techniques [41][42][43].…”
Section: Further Growth Of the Thin Zno Filmsupporting
confidence: 62%
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“…Epitaxial growth of thin ZnO films growing on Al 2 O 3 substrates at atmospheric pressure by MOCVD has also been reported by several authors for similar conditions [37,38]. The simulated film grew with the main crystallographic c-axis parallel to the (0 0 0 1) Al 2 O 3 substrate, which was also observed by the films deposited by MOCVD at temperature of 773 K [39,40]. The prevalence of c-axis oriented ZnO films has also been observed by other deposition techniques [41][42][43].…”
Section: Further Growth Of the Thin Zno Filmsupporting
confidence: 62%
“…sputtering [18][19][20], evaporation [21], atomic layer deposition [22], molecular beam epitaxy [23][24][25], chemical vapour deposition [7,8,[26][27][28][29][30][31][32][33][34][35][36][37][38][39][40] and pulsed laser deposition [41][42][43]. A number of papers investigated experimentally TiO 2 and ZnO thin films obtained by metalorganic chemical vapour deposition (MOCVD) [30][31][32][33][34][35][36][37][38][39][40], which is a successful technique permitting good control of deposition parameters and, consequently, of composition, microstructure and morphology of the film. In contrast to the relatively large amount of experimental work, and even when they can provide unique insights into the growth mechanisms and structure of thin film depositions, atomistic studies of TiO 2 and ZnO films by computer simulations are scarce because of the reasons we discuss below.…”
Section: Introductionmentioning
confidence: 99%
“…[1] and [2]. High quality epitaxial films of un-doped ZnO have usually been deposited on single crystalline substrates, such as sapphire by MBE [3,4], MOCVD [5,6], PLD [7,8] and sputtering [9][10][11]. However, reports of sputtering of ZnO films on amorphous substrates such as quartz and glass with properties comparable to those of epitaxial films are limited [12][13][14].…”
Section: Introductionmentioning
confidence: 99%
“…Substrate surface structures can affect crystallinity and morphology of thin-films 14 15 16 . Previously, we observed the formation of periodic nanogroove arrays on room-temperature pulsed-laser-deposited NiO (111) epitaxial thin films grown on atomically stepped sapphire (0001) substrates via post-thermal annealing in air, but the mechanism remained under discussion 17 .…”
mentioning
confidence: 99%