Effect of substrate temperature on the structure and optical properties of ZnO thin films deposited by reactive rf magnetron sputtering

High optical quality ZnO epilayers grown on sapphire substrates by reactive magnetron sputtering of zinc target

“…These values are close to the corresponding JCPDS value of 34.4391 (File no. , thus indicating the absence of uniform strain in the epilayers, as reported [23] earlier for the polycrystalline ZnO films deposited on quartz substrates; o-2y-scans for the symmetric (0 0 0 2), (0 0 0 4) and (0 0 0 6) reflections for ZnO epilayers deposited at substrate temperatures of 300 and 600 1C are shown in Fig. 2(a).…”

“…In a recent work [23] on polycrystalline ZnO films deposited on quartz substrates by reactive rf magnetron sputtering of metallic zinc target, it has been reported that the film deposited at 300 1C showed a strong and nearly complete c-axis orientation of crystallites. The films deposited at higher substrate temperatures showed negligible uniform strain but a steady increase in the misorientation of the crystallites with respect to the film surface.…”

Characterization of ZnO films prepared by sol-gel method

“…So far, ZnO thin film preparation methods are mainly concentrated in the two major categories of physical methods and chemical methods [7,8], including Sol-gel process for its simple, low cost, uniform thickness and easy to form in any form of large-scale substrate film outstanding advantages and favored by the majority of scientific research workers.…”

Comparative Study About the Structural Properties of ZnO Films Grown on Si, GaAs, And Al2O3 Substrates and a GaN Template

“…The Si substrate of a diamond structure and the GaAs substrate of a zinc blende structure, which have the highest crystalline qualities in the surface and bulk among any other developed semiconductor substrates, have the merits of large-area wafer ability and economic feasibility. However, the two materials have the structural mismatches with ZnO, which hampers the epitaxial growth of ZnO films on the both substrates [7][8][9][10]. We note that there is not yet systematic result about the difference in the structural properties of the ZnO films grown on each substrate, referred above, though a lot of research results about the growth technique and physical properties of thin film ZnO have been reported until now.…”

“…ZnO has attracted an attention as one of the promising materials required to realize the emitters and detectors in the ultraviolet region and the high-speed devices in the information communication system, because it has the outstanding physical properties of a wide-bandgap of 3.37 eV, an exiton-binding energy of 60 meV, a saturation velocity of 3.1u10 7 cm/sec, and a cohesive energy of 1.89 eV [1][2][3]. However, ZnO has an essential problem where it is still lack of the reliably available homosubstrate that thin film ZnO can be grown on, even if the substrate that a material can be grown on is an essential problem in the thin film technology.…”