Effects of residual stresses on cracking and delamination risks of an avionics MEMS pressure sensor

Auersperg, J.; Auerswald, Ellen; Collet, Christine; Dean, T. P.; Vogel, Dietmar; Winkler, T.; Rzepka, Sven

doi:10.1109/eurosime.2017.7926235

Cited by 4 publications

(3 citation statements)

References 5 publications

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“…There are minor disadvantages in terms of nonlinearity error and zero output signal, but it is significantly critical for the current situation among the performance of other pressure sensor chips [29][30][31][32][33][34][35][36][37][38].…”

Section: Comparative Analysismentioning

confidence: 99%

Pressure Sensor Chip with New Electrical Circuit for 10 kPa Range

Basov

2023

Preprint

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Characteristics of high sensitivity MEMS pressure sensor chip for 10 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The experimental results prove that pressure sensor chip PDA-NFL with 4.0×4.0 mm2 chip area has sensitivity S = 10.1 ± 2.3 mV/V/kPa with nonlinearity of 2KNL = 0.26 ± 0.12 %/FS (pressure is applied from the back side of pressure sensor chip).

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Section: Comparative Analysismentioning

confidence: 99%

Pressure Sensor Chip with New Electrical Circuit for 10 kPa Range

Basov

2023

Preprint

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“…The resonance frequency is proportional to the square root of the residual stress; therefore as stress changes, so will the frequency. The total residual stress σ T at an arbitrary temperature is governed by two parts: an intrinsic component σ i which is generated by the lattice mismatch between membrane and substrate during growth [13], [14], and a temperature dependent component σ th which is determined by the coefficients of thermal expansion (CTE) of the membrane and substrate. The total residual stress is given by…”

Section: Residual Stress and Temperaturementioning

confidence: 99%

“…A measurement of the residual stress can be used to determine the risks for cracking and delamination [14]. Recently, several techniques have been used to measure the mechanical stability and residual stress in membranes [15].…”

mentioning

confidence: 99%

Ultrasonic Inspection and Self-Healing of Ge and 3C-SiC Semiconductor Membranes

Zhou

Colston

Myronov

et al. 2020

J. Microelectromech. Syst.

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Knowledge of the mechanical properties and stability of thin film structures is important for device operation. Potential failures related to crack initiation and growth must be identified early, to enable healing through e.g. annealing. Here, three square suspended membranes, formed from a thin layer of cubic silicon carbide (3C-SiC) or germanium (Ge) on a silicon substrate, were characterised by their response to ultrasonic excitation. The resonant frequencies and mode shapes were measured during thermal cycling over a temperature range of 20-100 • C. The influence of temperature on the stress was explored by comparison with predictions from a model of thermal expansion of the combined membrane and substrate. For an ideal, non-cracked sample the stress and Q-factor behaved as predicted. In contrast, for a 3C-SiC and a Ge membrane that had undergone vibration and thermal cycling to simulate extended use, measurements of the stress and Q-factor showed the presence of damage, with the 3C-SiC membrane subsequently breaking. However, the damaged Ge sample showed an improvement to the resonant behaviour on subsequent heating. Scanning electron microscopy showed that this was due to a self-healing of sub-micrometer cracks, caused by expansion of the germanium layer to form bridges over the cracked regions, with the effect also observable in the ultrasonic inspection. [2020-0017] Index Terms-Laser ultrasound, vibration, microelectromechanical systems (MEMS), thin films. I. INTRODUCTION S OLID thin films are used in a wide variety of engineering systems, including development of micro-electromechanical systems (MEMS) and nano-electro-mechanical systems (NEMS) [1]-[4]. The suspended square thin film is a simple MEMS structure and can be used in pressure sensors, or as a platform for integrating devices for applications such as near-infrared photo-detectors, flow sensors, photonic modulators, lasers, and enhancing silicon light emission via carrier injection [5]-[10]. The use of tensile strained membranes, such as Germanium (Ge) on Silicon (Si), can change the electronic or optoelectronic properties by reducing the energy band gap [11], [12]. However, the residual stress in thin films, especially within a multilayer structure, is temperature dependent. Changes in temperature can induce mechanical Manuscript

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