Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress

Dong, Lin; Su, Wan-Ching; Chang, Ting‐Chang; Chen, Hong-Chih; Tu, Yu‐Fa; Yang, Jianwen; Zhou, Kuan‐Ju; Hung, Yang‐Hao; Lu, I-Nien; Tsai, Tsung‐Ming; Zhang, Qun

doi:10.1109/ted.2020.2990135

Cited by 10 publications

(7 citation statements)

References 20 publications

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“…It is worth noting that, at the very beginning of the sensing measurement of, for example, the 90:9:1 ITWO transistor in Figure 3b, the drain current slightly decreases with time, which should be due to the trapping process of majority carriers, i.e., electrons, at the ITWO/SiO 2 interface. 50 This phenomenon is an indicator of the existence of traps at the interface. Once all traps at the interface are filled after a period of time, the transistor presents a stable drain current.…”

Section: Proximity Sensing Of Itwo Transistor With Extended-gate Conf...mentioning

confidence: 99%

Tungsten-Doped Indium Tin Oxide Thin-Film Transistors for Dual-mode Proximity Sensing Application

Zeng,

Peng,

Lin

et al. 2023

ACS Appl. Mater. Interfaces

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Technologies for human−machine interactions are booming now. In order to achieve multifunctional sensing abilities of electronic skins, further developments of various sensors are in urgent demand. Herein, a dualmode proximity sensor based on an oxide thin-film transistor (TFT) is reported. Although InSnO (ITO) is featured with high mobility, the inherent high carrier concentration limits its use as a channel material for thin-film transistors. Herein, the tungsten element was introduced as a carrier suppressor to develop ITO-based semiconducting materials and devices. TFTs with amorphous tungsten-doped ITO (ITWO) channel layers were fabricated. As for a flat panel display application, the TFT device from 250 °Cannealed ITWO layer with an atomic ratio of In/Sn/W = 86:9:5 presented the optimal device performance with carrier mobility of 11.53 cm 2 V −1 s −1 , swing subthreshold of 0.66 V dec −1 , threshold voltage of −2.18 V, and I on /I off ratio of 3.33 × 10 7 and much small hysteresis of transfer characteristic. ITWO TFT devices were further developed as dual-mode proximity sensors that could work with both extended-gate and compact configurations, where the drain current was directly related to the surface potential of a charged object and the distance between the sensing end and the object, enabling the proximity sensing of charged stimuli. For extended-gate-configured proximity sensing, a charged object modulated the formation of a conductive channel at the semiconductor/SiO 2 interface, while this conductive channel occurred at the semiconductor/air interface for compactconfigured sensing. Formation of the conductive channel of the compact transistor was modulated by the electric field component in the direction perpendicular to the interface, and the drain current was sensitive to the orientation of the approaching object, which implied the capacity of angle sensing to the approach of a charged object. This work further emphasizes that the basic device performance should be optimized according to its specific application scenarios rather than only considering the requirements of the panel display.

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Section: Proximity Sensing Of Itwo Transistor With Extended-gate Conf...mentioning

confidence: 99%

Tungsten-Doped Indium Tin Oxide Thin-Film Transistors for Dual-mode Proximity Sensing Application

Zeng,

Peng,

Lin

et al. 2023

ACS Appl. Mater. Interfaces

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“…It can be observed that TFT with larger channel width (W) shows larger ΔVth over time. For smaller size TFTs, the heating induced by current stressing is more difficult to be dissipated, and thus better PBS stability is able to be achieved [17][18][19]. Therefore, using smaller size TFTs, the proposed gate driver in array design is able to achieve better operation stability.…”

Section: Layout Placement For In-array Integrationmentioning

confidence: 99%

Amorphous IGZO Thin-Film Transistor Gate Driver in Array for Ultra-Narrow Border Displays

Zhou

Guo

Ouyang

et al. 2022

IEEE J. Electron Devices Soc.

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A gate driver in array (GIA) design based on the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) is developed for narrow border displays. In the design, each TFT in the gate driver circuits is divided into a certain number of smaller size devices, which can be placed in different subpixels. Therefore, the pixel aperture ratio loss is minimized, and uniform placement of the gate driver circuits over the pixel array area is able to be achieved. The proposed step-like repeating block structure further reduces the occupied area of the signal interconnects. A 12.4-inch fringe field switching (FFS) liquid crystal display (LCD) panel of ultra-narrow border (0.5 mm) is demonstrated with reliable operation based on this GIA design, proving its potential for practical applications. Keywordsdisplay; narrow border; indium gallium zinc oxide; thin-film transistor; gate driver on array; gate driver in array

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“…In order for oxide TFTs to replace the Si CMOS backplane, the facile integration process of submicron scale devices should be developed on the glass substrate. Furthermore, short‐channel effects such as drain‐induced barrier lowering (DIBL), hot carrier effects (HCE), and inappropriate leakage current are major concerns 17–19 . Non‐planar architectures such as three‐dimensional (3D)‐vertical, recess channel, or FinFET structures can provide solutions to these fundamental issues.…”

Section: Introductionmentioning

confidence: 99%

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

2022

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This paper reviews recent developments in the fabrication of high‐performance n‐channel metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are now attracting attention due to their potential for use in augmented and virtual reality, ultra‐high‐definition organic light‐emitting diodes, and flexible electronics. Recent trends in research on TFT backplanes for display applications are provided in the introduction. In the main section, ALD‐derived n‐type oxides serving as active layers are classified into binary, ternary, and quaternary systems, and recent developments and critical issues in n‐channel oxide TFTs are described. The performance of n‐channel oxide TFTs can be boosted through advanced architectures, including stacked heterojunction channels using two‐dimensional electron gases, and the introduction of high‐k dielectric such as ALD‐derived hafnium oxide, which is highlighted in this review. Finally, progress in p‐channel ALD‐derived oxide TFTs is briefly addressed with respect to complementary metal–oxide‐semiconductor applications.

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Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress

Cited by 10 publications

References 20 publications

Tungsten-Doped Indium Tin Oxide Thin-Film Transistors for Dual-mode Proximity Sensing Application

Tungsten-Doped Indium Tin Oxide Thin-Film Transistors for Dual-mode Proximity Sensing Application

Amorphous IGZO Thin-Film Transistor Gate Driver in Array for Ultra-Narrow Border Displays

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

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