Effects of reactor pressure and residence time on GaN MOVPE growth efficiency

High growth rate metal organic vapor phase epitaxy GaN

“…When there was flow turbulence at upstream region, we have observed growth rate saturation [3,17]. Growth rate saturation is also reported in a case with a long residence time in a reaction zone [18]. This implies there could be some critical residence time for growth rate saturation.…”

Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors

“…Data collected form various ''warm-wall'' reactors (like the Planetary Reactor s ) [11] suggest that GaN particles are not formed (or are formed in small amounts only) in this type of the reactor even at enhanced pressures, in contrast to ''cold-wall'' reactors. It has also been shown by Azuma et al [12] that during metal-organic CVD synthesis of GaN nano-particles, the use of H 2 carrier gas reduces the rate of GaN particle production.…”

High Growth Rate MOVPE

“…As described in the previous section, when there was flow turbulence at the upstream region, we have observed growth rate saturation. Growth rate saturation is also reported in a case with a long residence time in a reaction zone [7]. There would be some critical residence time for growth rate saturation.…”

“…The concept of the reactor is described in the following section on high-flow-speed reactor. Lundin et al also reported that the growth rate of GaN saturated at about 4 m=h at 800 mbar at a fixed residence time in the growth region [7]. The detailed reaction pathway will be discussed in the next section.…”