High growth rate metal organic vapor phase epitaxy GaN

Matsumoto, Koh; Tokunaga, Hitoo; Ubukata, Akinori; Ikenaga, Kazumasa; Fukuda, Yasushi; Tabuchi, Toshiya; Kitamura, Yuichiro; Koseki, Shuichi; Yamaguchi, Akira; Uematsu, Kunimasa

doi:10.1016/j.jcrysgro.2008.06.009

Cited by 21 publications

(18 citation statements)

References 16 publications

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“…6.13 [19]. It is noteworthy that a recently reported GaN growth rate by HVPE [23] lies on the same line as the present work for MOVPE, while old data for HVPE in the literature [24][25][26][27] lie below the line.…”

Section: Discussion and Summarysupporting

confidence: 85%

“…In Fig. 6.11, the growth rate of GaN is shown as a function of normalized TMG supply rate [18,19]. The maximum growth rate was limited only by the limitation of TMG supply.…”

Section: Results Of High-growth-rate Gan By Using a High-flow-speed Rementioning

confidence: 99%

“…Surface morphology of all the samples was smooth regardless of the growth rate. Figure 6.12 shows¨-scan X-ray diffraction full width at half-maximum (XRD FWHM) of (002) and (102) reflection as a function of the growth rate [18,19]. In this experiment, the NH 3 flow rate was fixed at 100 SLM, and the TMG supply rate was changed.…”

Section: Results Of High-growth-rate Gan By Using a High-flow-speed Rementioning

confidence: 99%

“…Table 6.2 summarizes the carbon concentration and sheet resistance of GaN layers as a function of V/III ratio and the growth rate [19]. At the V/III ratio of 600 (growth rate of 12 m=h), the carbon concentration was 1:5 10 17 cm 3 .…”

Section: Results Of High-growth-rate Gan By Using a High-flow-speed Rementioning

confidence: 99%

“…The figure is modified from [19] with additional data from [2] always lower than that of diffusion-limited growth condition, the different growth conditions in Refs [24][25][26][27] may partly explain the reason for the scattered data of HVPE in Fig. 6.13.…”

Section: Fig 613mentioning

confidence: 99%

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High Growth Rate MOVPE

Matsumoto¹,

Tokunaga²,

Ubukata³

et al. 2010

Technology of Gallium Nitride Crystal Growth

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In this chapter, growth mechanism of GaN and AlGaN by MOVPE is described in detail. The parasitic reaction that generates particulates in vapor phase is the most probable limiting factor of maximum growth rate of GaN and AlGaN. Both experimental and quantum chemical study of vapor phase reaction between organo-metals and ammonia is described. From the close insight of vapor phase reaction, high flow speed three layered gas injection has been developed. By employing this three-layer gas-injection, GaN was grown with growth rate as high as 28m/h at atmospheric pressure. As long as the present growth conditions are concerned, SIMS and XRD results suggested that the growth rate of 12m/h would be a practical limitation of good quality material in terms of electrical and structural properties.

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Section: Discussion and Summarysupporting

confidence: 85%

“…In Fig. 6.11, the growth rate of GaN is shown as a function of normalized TMG supply rate [18,19]. The maximum growth rate was limited only by the limitation of TMG supply.…”

Section: Results Of High-growth-rate Gan By Using a High-flow-speed Rementioning

confidence: 99%

Section: Results Of High-growth-rate Gan By Using a High-flow-speed Rementioning

confidence: 99%

Section: Results Of High-growth-rate Gan By Using a High-flow-speed Rementioning

confidence: 99%

Section: Fig 613mentioning

confidence: 99%

See 3 more Smart Citations

High Growth Rate MOVPE

Matsumoto¹,

Tokunaga²,

Ubukata³

et al. 2010

Technology of Gallium Nitride Crystal Growth

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Epitaxial Systems for III‐V and III‐Nitride MOVPE

Lundin

Талалаев²

2019

Metalorganic Vapor Phase Epitaxy (MOVPE)

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Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Zhang

Chen

et al. 2021

Physica Status Solidi (a)

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The development of high‐quality gallium nitride (GaN) epitaxy with thick drift layer, low controllable doping, and high mobility is key for vertical high‐power devices. Herein, the effect of increasing trimethylgallium (TMGa) molar flow rate on the growth rate, impurity incorporation, charge compensation, surface morphology, and carrier mobility is systematically studied. An optimized metalorganic chemical vapor deposition GaN growth condition with a typical growth rate of 2 μm h−1 is used as the baseline. With significant suppression of background Si, other impurity concentrations, and a precise control of the doping precursor SiH4 flow, an electron concentration as low as 4 × 1015 cm−3 in n−‐GaN is achieved. Through increasing the TMGa flow rate, the GaN growth rate is increased to 5.2 μm h−1. Secondary ion mass spectroscopy results show that the background H, O, and Mg remain below detection limit, but C level is increased to 2 × 1016 cm−3. GaN growth on Mn‐doped semi‐insulating GaN substrate is performed to probe the transport properties of film with low dislocation densities. Hall measurement shows that an electron mobility decreases from 852 to 604 cm2 V−1 s−1 as the growth rate increases. Results from this work reveal the challenge and guidance for achieving GaN vertical high power devices.

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High growth rate metal organic vapor phase epitaxy GaN

Cited by 21 publications

References 16 publications

High Growth Rate MOVPE

High Growth Rate MOVPE

Epitaxial Systems for III‐V and III‐Nitride MOVPE

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

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