Abstract.ZnO nanorods (NRs) arrays were synthesized by chemical solution deposition (CSD) method on commercial glass substrate with ZnO thin film act as seed layer prepared by sol-gel spin coating. The effect of annealing temperature of 150°C, 250°C and 500°C, respectively, on the structural growth was investigated. The observation reveals the structural improvement as the annealing temperature increased. The influence of gadolinium doping to ZnO NRs arrays wasexplored upon the structural and optical features. The FESEM imaging along with XRD, AFM and UV-Vis analysis were conducted to dissect the information gained by performing a study case on various gadolinium doping content in the range of 1 at. % to 4 at. %. Based on the results, the correlation between the doping content were drawn in details in this paper.
IntroductionZinc oxide (ZnO) is well known in the scientific community to possess a lot of advantages in its nature, making it as one of the most prominent material for a variety of electronic and optoelectronic applications [1]. However on the contrary, doped ZnO can hold some very different properties compared to that of pure ZnO. Group III elements, i.e. Ga, Al, and In can be used as ntype dopant in ZnO, have been generally recognized to influence the optical and also the electrical properties of the materials [2].Other elements of rare earth group, i.e. Ce, Er, Eu, La, Tb, Tm, Yb, and Dy as p-type dopant to ZnO, have also attracted significant attention among the community due to their unique optical properties which give to intense emission peaks in the visible and near infrared range [3].Hence, the electrical conductivity, type of conduction and band gap range, including the magnetic characteristics of the nanomaterial can be manipulated through doping. Therefore, doping effect can enhance the present properties of ZnO and provides space for new applications possible.