2015
DOI: 10.1016/j.jallcom.2015.07.009
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Some physical investigations on hexagonal-shaped nanorods of lanthanum-doped ZnO

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Cited by 73 publications
(13 citation statements)
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“…Furthermore, additional insights on the impact of the Co and Mn atoms incorporation on the structural properties of the sprayed ZnO material can be obtained from the texture coefficient (TC), the dislocation density (δ), and the internal strain (ε). The value of the texture coefficient (TC), which indicates the abundance of grains in a (hkl) orientation, was calculated using the Harris method as follows [ 38 , 39 ]: TC (hkl) = [I hhk /I 0 ] ⁄ [ n −1 × (∑I hkl )⁄I 0 )], where n , I hkl , and I 0 are the number and the intensity of reflections, respectively. The measured intensity of the (hkl) orientation and the corresponding intensity of the XRD reference are provided by the JCPDS 036-1451 card.…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, additional insights on the impact of the Co and Mn atoms incorporation on the structural properties of the sprayed ZnO material can be obtained from the texture coefficient (TC), the dislocation density (δ), and the internal strain (ε). The value of the texture coefficient (TC), which indicates the abundance of grains in a (hkl) orientation, was calculated using the Harris method as follows [ 38 , 39 ]: TC (hkl) = [I hhk /I 0 ] ⁄ [ n −1 × (∑I hkl )⁄I 0 )], where n , I hkl , and I 0 are the number and the intensity of reflections, respectively. The measured intensity of the (hkl) orientation and the corresponding intensity of the XRD reference are provided by the JCPDS 036-1451 card.…”
Section: Resultsmentioning
confidence: 99%
“…The calculated values of micro-strain of the films are listed in Table 3. The dislocation density (δ) is calculated using the following equation 22 .where D is the average crystallite size. The corresponding D values of the films are also listed in Table 2.…”
Section: Resultsmentioning
confidence: 99%
“…On the other hand, dielectric calculations are used to determine optical relaxation time op which correspond to the lifetime of photo-excited carriers. In the near infrared region, optical relaxation time op is related to real and imaginary parts ( 1 and 2) of the complex dielectric constant via the relation [42,43]. The calculated values of relaxation time are shown in Table 2.…”
Section: Optical Studymentioning
confidence: 99%