Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy

Rapid thermal annealing combined with SiO 2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 m GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the stage of blueshift saturation. After thermal annealing under specific conditions, a shift in band gap of over 170 meV has been obtained in sputtered SiO 2 -capped samples, while uncapped and plasma enhanced chemical vapor deposited SiO 2 -capped samples demonstrated a negligible shift. Quantum well intermixing in sputtered SiO 2 -capped samples originates from enhanced compositional interdiffusion due to the generation of point defects by ion bombardment during the sputtering process. Secondary ion mass spectrometry has confirmed that the enhanced blueshift was caused by the interdiffusion of group III atoms ͑In and Ga͒ between the quantum wells and barriers. Detailed photoluminescence and excitation spectroscopy were performed to study the optical properties of both intermixed and nonintermixed samples.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy

Cited by 9 publications

References 16 publications

Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing

Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing

Thermal annealing effect on 1.3-μm GaInNAs/GaAs quantum well structures capped with dielectric films

Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures

Contact Info

Product

Resources

About