Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures

Sun, Handong; Macaluso, Roberto; Dawson, Martin D.; Robert, F.; Bryce, A.C.; Marsh, J.H.; Riechert, H.

doi:10.1063/1.1590413

Cited by 23 publications

(13 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…We believe that these spacer layers at the interfaces affect the PL properties by means of a reduction in the defectrelated In-Ga interdiffusion of atoms between the quantum wells and the barriers, which is also observed by others. [15][16][17] …”

Section: Discussionmentioning

confidence: 98%

“…Effects on the PL caused by the introduction of the spacer layers placed in between the quantum wells and barriers are most influential at these higher thermal energies in preventing the In and Ga from interdiffusing between the quantum wells and barriers. Macaluso et al 15 and Sun et al 16,17 have also observed this In-Ga interdiffusion to be exacerbated in annealed GaInNAs quantum-well structures that were capped with SiO 2 using an ion sputtering process, Rapid Thermal Annealing Effects on the Photoluminescence Properties of Molecular Beam Epitaxy-Grown GaIn(N)As Quantum Wells with Ga(N)As Spacers and Barriers 857 which generated increased point defects in their sample. We believe that the ions from their sputtering process are comparable to the ions generated from our N-plasma source, leading to plasmarelated crystal damage in our samples.…”

Section: Section Iii: Quantum Wells With 32% In and Barriers With 1% mentioning

confidence: 90%

See 1 more Smart Citation

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

Govindaraju

Reifsnider

Oye

et al. 2004

Journal of Elec Materi

View full text Add to dashboard Cite

This article describes the effects of rapid thermal annealing (RTA) on the photoluminescence (PL) emission from a series of GaIn(N)As quantum wells. Indium compositions of both 20% and 32% were examined with nominal N compositions of 1% or 2%. The N location was varied within our quantum structure, which can be divided into three regions: (1) quantum well, (2) Ga(N)As spacer layers at the barrier-to-well interface and well-to-barrier interface, and (3) barriers surrounding each quantum well. Eight combinations of samples were examined with varying In content, Ga(N)As spacer layer thickness, N content, and N location in the structure. In the best cases, the presence of these Ga(N)As spacer layers improves the PL properties, due to annealing, with a reduction in the emission wavelength blueshift by ϳ400 Å, a reduction of the decrease in the full-width at half-maximum (FWHM) by ϳ5 meV, and a threefold reduction of the increase in integrated intensity. It was also observed that relocating N from the quantum wells to the barriers produces a comparable emission wavelength both before and after annealing. Our results further show that the composition of incorporated N in the material is most influential during the stages of RTA in which relatively small amounts of thermal energy is present from our lower annealing times and temperatures. Hence, we believe a low thermal-energy anneal is responsible for the recovery of the plasma-related crystal damage that was incurred during its growth. However, the In composition in the quantum well is most influential during the latter stages of thermal annealing, at increased times and temperatures, where the wavelength blueshift was roughly independent of the amount of incorporated N. As a result, our investigations into the effects of RTA on the PL properties support other reports that suggest the wavelength blueshift is not due to N diffusion.

show abstract

Section: Discussionmentioning

confidence: 98%

Section: Section Iii: Quantum Wells With 32% In and Barriers With 1% mentioning

confidence: 90%

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

Govindaraju

Reifsnider

Oye

et al. 2004

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…The use of inter-diffusion of quantum wells (QWs) is an emerging technology that is significant for fabricating semiconductor lasers since it improves devices' optical and electrical properties [16]. Selective inter-diffusion is achievable by obscuring into the QW wafer's desired regions.…”

Section: Introductionmentioning

confidence: 99%

“…Selective inter-diffusion is achievable by obscuring into the QW wafer's desired regions. Since the 1980s, there have been extensive investigations regarding inter-diffusion [16,17]. It comprises disordering or intermixing of heterostructures that are quantum-confined like QWs and quantum dots (QDs).…”

Section: Introductionmentioning

confidence: 99%

Diffusion and Quantum Well Intermixing

Tabbakh¹

2020

Recent Advances in Nanophotonics - Fundamentals and Applications

View full text Add to dashboard Cite

Diffusion or intermixing is the movement of particles through space. It primarily occurs in every form of matter because of thermal motion. Atom diffusion and intermixing can also happen in crystalline semiconductors whereby the atoms that are diffusing and intermixing move from one side of the lattice to the adjacent one in the crystal semiconductor. Atom diffusion, which may also involve defects (including native and dopant), is at the core of processing of semiconductors. The stages involved in semiconductor processing are growth, followed by post-growth, and then the construction stage comes last. The control of every aspect of diffusion is necessary to accomplish the required goals, therefore creating a need for knowing what diffuses at any point in time. This chapter will briefly summarize the techniques that are in existence and are used to create diffused quantum wells (QWs). Also, it will outline the examples of QW semiconductor lasers and light-emitting diode (LED) by the utilization of inter-diffusion techniques and give recent examples.

show abstract

“…17,20 Strong QW/barrier intermixing ͑which was mainly observed for MBE-grown samples 7,9,12 ͒ can be caused by the enhanced presence of point defects ͑which originate from the rf nitrogen plasma source used for incorporating N in MBE͒. Sun et al 21 showed the secondary ion mass spectrometry of MBE samples that intentionally introducing point defects in the material results in the interdiffusion of group-III atoms between the QWs and barriers, and hence in a blueshift of the PL signal. It is also possible that point defects promote-in addition to interdiffusion-in-plane compositional diffusion.…”

Section: Introductionmentioning

confidence: 99%

Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing

Volz

Torunski

Rubel

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

The blueshift of the fundamental energy gap of ͑GaIn͒͑NAs͒ upon thermal treatment is well established. However, the physical reason is still controversially discussed in literature. In the present paper we give direct structural evidence using transmission electron microscopy in combination with structure factor calculation that this blueshift-for the metal organic vapor phase epitaxy grown samples investigated here-results solely from a change in the local environment of nitrogen. N is bound to Ga upon growth and moves into an In-rich environment upon annealing to minimize the strain energy of the crystal. The technique presented here can be used to unambiguously determine the reason for the blueshift of differently grown and annealed dilute nitride materials.

show abstract

Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures

Cited by 23 publications

References 35 publications

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

Diffusion and Quantum Well Intermixing

Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing

Contact Info

Product

Resources

About