Effects of rapid thermal annealing on GaAs1-xBix alloys

Abstract

Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method Appl. Phys. Lett. 101, 122102 (2012) A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process J. Appl. Phys. 112, 064302 (2012) Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

“…As shown in Table 5, for GaAsBi, there is no detectable peak wavelength shift for annealing temperature up to 700 • C and a marginal or no shift for annealing temperature between 700-800 • C. The enhancement of PL intensity at RT is also marginal, up to a maximum of three times, in contrast to the case of dilute GaAsN. Mohmad et al [145] found that the enhancement factor is a constant of 3 for x Bi up to 5% and then decreases to nearly 1 for x Bi = 6.5%. The PL intensity increases with annealing temperature up to 700 • C and then decreases for x Bi = 4% and up to 600 • C for x Bi = 6.5%.…”

“…Unfortunately, the Bi-related localized defects in GaAsBi are hardly reduced by annealing method [150]. Although Moussa et al reported that the PL intensity of GaAsBi enhances about one order of magnitude with an annealing temperature of about 700 • C [148], they suggested that the PL intensity improvement is dominated by the reduction of non-Bi-related defects [145]. Nevertheless, GaAsBi laser diodes [248,249] and LEDs [250] have been realized, suggesting the promising application of dilute bismides on optoelectronic devices.…”

“…Mohmad et al [145] reported RTA of 10-50 nm thick GaAs 1−x Bi x QWs with x Bi = 2.2%-6.5% grown at 380-420 • C and annealed at 600-800 • C for 30 s. Pendellösung fringes are clearly observed for GaAs 0.935 Bi 0.065 up to an annealing temperature of 700 • C, indicating good crystal and interface quality. Puustinen et al [141] carefully designed a set of 270 nm thick GaAsBi samples with the identical growth condition except using various growth temperatures between 220-315 • C. GaAs references samples were also grown at similar temperatures.…”

“…There are a number of annealing studies reported and they are summarized in Table 5 below. Most previous reports focus on RTA of GaAsBi grown by both MBE [141,[143][144][145][146][147] and MOCVD [148,149]. The growth temperature used is between 200 and 420 • C measured by a thermocouple.…”

Optical and spin properties of localized and free excitons in GaBixAs1−x/GaAs multiple quantum wells

“…The incorporation of Bi has been shown to have a dramatic impact on the band structure of GaAs. A band gap reduction of around 90 meV per percent of Bi and a large increase of spin-orbit (SO) split-off energy have been observed [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. This increase of spin-orbit interaction could suppress the non-radiative Auger recombination processes that affect the efficiency of lasers in the near infrared; it is also very attractive for semiconductor spintronics.…”