Effects of radiation damage on p-type silicon detectors

Rikner, Göran; Grusell, Erik

doi:10.1088/0031-9155/28/11/006

Cited by 124 publications

(87 citation statements)

References 9 publications

(5 reference statements)

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“…Silicon detectors of the ptype with a sensitive volume of about 0.3 mm3 were encapsulated in epoxy resin of density 1.2 g/cm3 (14). The 70 pn thick sensitive volume was positioned at a depth of 50 mg/cm2 below the detector surface.…”

Section: Methodsmentioning

confidence: 99%

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Selective Shielding of a p-Si Detector for Quality Independence

Rikner

Grusell

1985

Acta Radiologica: Oncology

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Section: Methodsmentioning

confidence: 99%

“…GRUSELL & RIKNER (7) showed why detectors based on n-type silicon, when radiation damaged, develop a sensitivity drop and a dose-rate non-linearity in pulsed radiation fields. With p-type detectors, the dose-rate non-linearity was eliminated and the radiation damage effect was limited to a moderate loss of sensitivity (14).…”

mentioning

confidence: 99%

Selective Shielding of a p-Si Detector for Quality Independence

Rikner

Grusell

1985

Acta Radiologica: Oncology

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“…Two sets of ptype silicon detectors as described by RIKNER & GRUSELL (12) were used. They were excentrically encapsulated in epoxy, had sensitive areas of about 1 and 4 mm', and sensitivities of 50 and 200 nC/Gy, respectively.…”

Section: Methodsmentioning

confidence: 99%

Variance Measurements with Two Semiconductor Dose Detectors

Rikner

Grusell

Högström

et al. 1984

Acta Radiologica: Oncology

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“…[4][5][6][7] Their higherthan-air electronic density, along with the low average energy required to form a carrier pair inside them, makes it possible to produce in these diodes radiation current densities about 18 000 times those of air. [8][9][10] This allows a small volume of silicon diode (approximately 10 −2 -10 −1 mm 3 ) to produce a current that can easily be measured. This high sensitivity (defined as charge collected per unit of absorbed dose) permits their use as very small volume detectors.…”

Section: Introductionmentioning

confidence: 99%

“…In diodes, the process that determines how many of the mobile charges generated by radiation are collected is not direct recombination, as in ionization chambers, but indirect recombination: a minority carrier is captured by a recombination-generation (RG) centre and then recombines with a majority carrier. 11,22 This is the reason for the variation of the diode response with the instantaneous dose rate (or dose per pulse), 23,24,11 with the accumulated dose, 9,11,24 and with temperature. There are also other dependencies resulting from detector design.…”

Section: Introductionmentioning

confidence: 99%

Application of spherical diodes for megavoltage photon beams dosimetry

et al. 2013

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Purpose: External beam radiation therapy (EBRT) usually uses heterogeneous dose distributions in a given volume. Designing detectors for quality control of these treatments is still a developing subject. The size of the detectors should be small to enhance spatial resolution and ensure low perturbation of the beam. A high uniformity in angular response is also a very important feature in a detector, because it has to measure radiation coming from all the directions of the space. It is also convenient that detectors are inexpensive and robust, especially to perform in vivo measurements. The purpose of this work is to introduce a new detector for measuring megavoltage photon beams and to assess its performance to measure relative dose in EBRT. Methods: The detector studied in this work was designed as a spherical photodiode (1.8 mm in diameter). The change in response of the spherical diodes is measured regarding the angle of incidence, cumulated irradiation, and instantaneous dose rate (or dose per pulse). Additionally, total scatter factors for large and small fields (between 1 × 1 cm 2 and 20 × 20 cm 2 ) are evaluated and compared with the results obtained from some commercially available ionization chambers and planar diodes. Additionally, the over-response to low energy scattered photons in large fields is investigated using a shielding layer. Results: The spherical diode studied in this work produces a high signal (150 nC/Gy for photons of nominal energy of 15 MV and 160 for 6 MV, after 12 kGy) and its angular dependence is lower than that of planar diodes: less than 5% between maximum and minimum in all directions, and 2% around one of the axis. It also has a moderated variation with accumulated dose (about 1.5%/kGy for 15 MV photons and 0.7%/kGy for 6 MV, after 12 kGy) and a low variation with dose per pulse (±0.4%), and its behavior is similar to commercial diodes in total scatter factor measurements. Conclusions: The measurements of relative dose using the spherical diode described in this work show its feasibility for the dosimetry of megavoltage photon beams. A particularly important feature is its good angular response in the MV range. They would be good candidates for in vivo dosimetry, and quality assurance of VMAT and tomotherapy, and other modalities with beams irradiating from multiple orientations, such as Cyberknife and ViewRay, with minor modifications.

show abstract

Effects of radiation damage on p-type silicon detectors

Cited by 124 publications

References 9 publications

Selective Shielding of a p-Si Detector for Quality Independence

Selective Shielding of a p-Si Detector for Quality Independence

Variance Measurements with Two Semiconductor Dose Detectors

Application of spherical diodes for megavoltage photon beams dosimetry

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