Effects of proximity to an electronic topological transition on normal-state transport properties of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">high</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mo>−</mml:mo><mml:mi>T</mml:mi></mml:mrow><mml:mrow><mml:mi>c</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>superconductors

Angilella, G. G. N.; Pucci, R.; Varlamov, A. A.; Onufrieva, F.

doi:10.1103/physrevb.67.134525

Cited by 14 publications

(15 citation statements)

References 40 publications

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“…Note, that the electron-hole asymmetry in the band structure is not the only effect that can lead to the appearance of a nonzero fluctuation correction to Hall conductivity. It has been shown (Angilella et al, 2003) that its sign and the value can depend on the topological structure of the Fermi surface. Evidence for a universal behavior of the Hall conductivity as a function of doping, which can change the topology of the Fermi surface, has been reported in the cuprate superconductors (Nagaoka et al, 1998).…”

Section: Fluctuation Hall Conductivitymentioning

confidence: 99%

“…The role of a weak disorder on the properties of SCs in the framework of the BCS theory was elucidated a long time ago in the seminal papers of Anderson (Anderson, 1959), and Abrikosov and Gor'kov (Abrikosov and Gor'kov, 1959a,b). It was demonstrated that in the case of SCs with isotropic spectrum and s-type pairing, which contain a not too high concentration of elastic impurities (the electronic mean free path is supposed to be much larger than the inter-atomic distance), the so-called Anderson theorem is valid.…”

Section: E Fluctuation Spectroscopy Of Inhomogeneous Films: Pseudogamentioning

confidence: 99%

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Fluctuation spectroscopy: From Rayleigh-Jeans waves to Abrikosov vortex clusters

2018

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5 We define the FCP concentration in d-dimensional space. This means that it determines the number of pairs per volume in the 3D case, the number of pairs per unit square in the 2D case, and the number of pairs per unit length in 1D. Since both wires and films are actual objects in three dimensional space, we can approximate the 3D concentration of FCPs,Ñ (3) , byÑ (3) = N (1) /s 2 for wires, where s 2 is the wire cross-section andÑ (3) = N (2) /s for films, where s is the thickness of the film, respectively.

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Section: Fluctuation Hall Conductivitymentioning

confidence: 99%

Section: E Fluctuation Spectroscopy Of Inhomogeneous Films: Pseudogamentioning

confidence: 99%

Fluctuation spectroscopy: From Rayleigh-Jeans waves to Abrikosov vortex clusters

2018

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“…[13,14] for recent reviews). The proximity to an essentially 2D ETT in the cuprates has been recently connected with the non-monotonic dependence of T c on doping [15], with the universal dependence of T c on the in-plane hopping ratio [15,16], as well as with the anomalous enhancement of the effect of superconducting fluctuations on several transport properties above T c [17].…”

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confidence: 99%

Multiband Superconductors Close to a 3D–2D Electronic Topological Transition

2005

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Within the two-band model of superconductivity, we study the dependence of the critical temperature T c and of the isotope exponent α in the proximity to an electronic topological transition (ETT). The ETT is associated with a 3D-2D crossover of the Fermi surface of one of the two bands: the σ subband of the diborides. Our results agree with the observed dependence of T c on Mg content in A 1−x Mg x B 2 (A = Al or Sc), where an enhancement of T c can be interpreted as due to the proximity to a 'shape resonance.' Moreover we have calculated a possible variation of the isotope effect on the superconducting critical temperature by tuning the chemical potential.

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“…One also recovers the direct correlation between T max c and the hopping ratio r [38,21,22]. We have also studied the effects of the proximity to an ETT on several normalstate properties of the high-T c cuprates [21,23]. In the normal state just above T c , the effect of the fluctuations can contribute to a better understanding of the unconventional properties of these materials [44,45].…”

Section: Effects Of Proximity To An Electronic Topological Transitionmentioning

confidence: 70%

“…temperature [23]. We found that Im γ is a sign-changing function of z, with two peaks occurring on both sides of the ETT, whose absolute value increases with increasing r.…”

Section: Effects Of Proximity To An Electronic Topological Transitionmentioning

confidence: 73%

Pressure-induced electronic topological transitions in low dimensional superconductors

Angilella¹

2004

J. Phys.: Condens. Matter

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The high-Tc cuprate superconductors are characterized by a quasitwo-dimensional layered structure where most of the physics relevant for high-Tc superconductivity is believed to take place. In such compounds, the unusual dependence of critical temperature Tc on external pressure results from the combination of the nonmonotonic dependence of Tc on hole doping or hole-doping distribution among inequivalent layers, and from an "intrinsic" contribution. After reviewing our work on the interplay among Tc, hole content, and pressure in the bilayered and multilayered cuprate superconductors, we will discuss how the proximity to an electronic topological transition (ETT) may give a microscopic justification of the "intrinsic" pressure dependence of Tc in the cuprates. An ETT takes place when some external agent, such as doping, hydrostatic pressure, or anisotropic strain, modifies the topology of the Fermi surface of an electronic system. As a function of the critical parameter z, measuring the distance of the chemical potential from the ETT, we recover a nonmonotonic behaviour of the superconducting gap at T = 0, regardless of the pairing symmetry of the order parameter. This is in agreement with the trend observed for Tc as a function of pressure and other material specific quantities in several high-Tc cuprates and other low dimensional superconductors. In the case of epitaxially strained cuprate thin films, we argue that an ETT can be driven by a strain-induced modification of the in-plane band structure, at constant hole content, at variance with a dopinginduced ETT, as is usually assumed. We also find that an increase of the inplane anisotropy enhances the effect of fluctuations above Tc on the normal-state transport properties, which is a fingerprint of quantum criticality at T = 0.

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Effects of proximity to an electronic topological transition on normal-state transport properties of thehigh−Tcsuperconductors

Cited by 14 publications

References 40 publications

Fluctuation spectroscopy: From Rayleigh-Jeans waves to Abrikosov vortex clusters

Fluctuation spectroscopy: From Rayleigh-Jeans waves to Abrikosov vortex clusters

Multiband Superconductors Close to a 3D–2D Electronic Topological Transition

Pressure-induced electronic topological transitions in low dimensional superconductors

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