Effects of proton and ion beam radiation on magnetic tunnel junctions

Park, Juneyoung; Kim, Jeong-Mok; Ryu, Joonghyun; Jeong, Jimin; Park, Byong‐Guk

doi:10.1016/j.tsf.2019.137432

Cited by 14 publications

(10 citation statements)

References 23 publications

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“…If the thermally driven processes triggered under irradiation have a predominant role during ion strikes (in the limit of a certain fluence), it seems reasonable to argue that degradation of magnetic properties appear before degradation of electrical properties. Reference [34] presents irradiation results obtained in recent perpendicular STT-MTJ which corroborate our thesis. The observation has been first attributed to the modest penetration of the low energy ions in the device stack but, it has also been observed after high energy (≥ 2 GeV) ion irradiation [27].…”

Section: Mgo Tunnel Barriersupporting

confidence: 79%

SEU Mechanisms in Spintronic Devices: Critical Parameters and Basic Effects

Coi

Adrianjohany²,

Pendina

et al. 2021

IEEE Trans. Nucl. Sci.

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The paper investigates radiation-induced switching mechanisms, temperature effects, breakdown voltage, sensitive volume and critical charge definitions for Spin-Transfer Torque Magnetic Tunnel Junction. Thermal spike model is adopted to estimate the temperature reached during heavy ion irradiation and temperature effects are suggested to be responsible for the magnetic properties degradation and for upset processes.

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Section: Mgo Tunnel Barriersupporting

confidence: 79%

SEU Mechanisms in Spintronic Devices: Critical Parameters and Basic Effects

Coi

Adrianjohany²,

Pendina

et al. 2021

IEEE Trans. Nucl. Sci.

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“…Hirose et al [105] estimated the risk of irradiative particle bombardments, that is, alpha particles and neutrons, which are the well-known soft error sources on the ground, with respect to both frequencies and the hazardous effects of bombardments. The effect of proton and Cr ion radiation on MTJs was investigated in [106], which concluded that an in-plane MTJ is robust to proton irradiation but the properties of an MTJ can be degraded by Cr ion irradiation.…”

Section: A Reliability Modeling and Evaluation Methodologies Of Mrammentioning

confidence: 99%

A Survey of Test and Reliability Solutions for Magnetic Random Access Memories

et al. 2021

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| Memories occupy most of the silicon area in nowadays' system-on-chips and contribute to a significant part of system power consumption. Though widely used, nonvolatile Flash memories still suffer from several drawbacks. Magnetic random access memories (MRAMs) have the potential to mitigate most of the Flash shortcomings. Moreover, it is predicted that they could be used for DRAM and SRAM replacement. However, they are prone to manufacturing defects and runtime failures as any other type of memory. This article provides an up-to-date and practical coverage of MRAM test and reliability solutions existing in the literature. After some background on existing MRAM technologies, defectiveness and reliability issues are discussed, as well as functional fault models used for MRAM. This article is dedicated to a summarized description of existing test and reliability improvement methods developed Manuscript

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“…Particularly, the devices used in the aerospace are required to be radiation resistant to cosmic rays. Since MTJs are equipped with intrinsic magnetic immunity to radiation effect ( Kobayashi et al., 2014 ; Hughes et al., 2012 ; Ren et al., 2012 ; Park et al., 2019 ), MRAMs have already been used in satellites early in March 2008 ( Greenemeier, 2008 ). Moreover, featured with almost unlimited endurance, spin-orbitronic devices are particular favorable to be applied in avionics, e.g., a spacecraft, which may travel more than tens of years in the universe.…”

Section: Emerging Spin-orbitronic Devices Applicationsmentioning

confidence: 99%

Prospect of Spin-Orbitronic Devices and Their Applications

et al. 2020

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Summary Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory and logic devices at sub-nano second and sub-picojoule regimes. Importantly, spin-orbitronic devices are intrinsic of nonvolatility, anti-radiation, unlimited endurance, excellent stability, and CMOS compatibility, toward emerging applications, e.g., processing in-memory, neuromorphic computing, probabilistic computing, and 3D magnetic random access memory. Nevertheless, the cutting-edge SOT-based devices and application remain at a premature stage owing to the lack of scalable methodology on the field-free SOT switching. Moreover, spin-orbitronics poises as an interdisciplinary field to be driven by goals of both fundamental discoveries and application innovations, to open fascinating new paths for basic research and new line of technologies. In this perspective, the specific challenges and opportunities are summarized to exert momentum on both research and eventual applications of spin-orbitronic devices.

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Effects of proton and ion beam radiation on magnetic tunnel junctions

Cited by 14 publications

References 23 publications

SEU Mechanisms in Spintronic Devices: Critical Parameters and Basic Effects

SEU Mechanisms in Spintronic Devices: Critical Parameters and Basic Effects

A Survey of Test and Reliability Solutions for Magnetic Random Access Memories

Prospect of Spin-Orbitronic Devices and Their Applications

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