Effects of process parameters on optical characteristics of diamond-like carbon thin films deposited using high-power impulse magnetron sputtering

Tang, Jian-Fu; Tsai, Yi-Jing; Huang, Chun-Hong; Lin, Ching-Yen; Yang, Fu-Chi; Hwang, Joonsik; Chang, Chi-Lung

doi:10.1016/j.tsf.2019.137562

Cited by 4 publications

(1 citation statement)

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“…Some studies [15,[19][20][21]23] also observed additional distinct peak/peaks in the recorded IEDFs at lower energies. The effects resulting from the energy-enhanced ion bombardment during bipolar HiPIMS have so far been reported for deposition of Cu [18,24], Ti [12], TiN [14], DLC [17,25,26] and CrAlN films [27]. In addition, a study of the effect of U + on the properties of CrN films with grounded and floating substrates was carried out by Batková et al [28].…”

Section: Introductionmentioning

confidence: 99%

Dynamics of bipolar HiPIMS discharges by plasma potential probe measurements

Zanáška

Lundin

Brenning

et al. 2022

Plasma Sources Sci. Technol.

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The plasma potential at a typical substrate position is studied during the positive pulse of a bipolar high-power impulse magnetron sputtering (bipolar HiPIMS) discharge with a Cu target. The goal of the study is to identify suitable conditions for achieving ion acceleration independent on substrate grounding. We find that the time-evolution of the plasma potential during the positive pulse can be separated into several distinct phases, which are highly dependent on the discharge conditions. This includes exploring the influence of the working gas pressure (0.3 – 2 Pa), HiPIMS peak current (10 – 70 A corresponding to 0.5 – 3.5 A/cm2), HiPIMS pulse length (5 – 60 μs) and the amplitude of the positive voltage U+ applied during the positive pulse (0 – 150 V). At low enough pressure, high enough HiPIMS peak current and long enough HiPIMS pulse length, the plasma potential at a typical substrate position is seen to be close to 0 V for a certain time interval (denoted phase B) during the positive pulse. At the same time, spatial mapping of the plasma potential inside the magnetic trap region revealed an elevated value of the plasma potential during phase B. These two plasma potential characteristics are identified as suitable for achieving ion acceleration in the target region. Moreover, by investigating the target current and ion saturation current at the chamber walls, we describe a simple theory linking the value of the plasma potential profile to the ratio of the available target electron current and ion saturation current at the wall.

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