Effects of pressure and deposition time on the characteristics of In2Se3 films grown by magnetron sputtering

Effects of sputtering pressure and annealing temperature on the characteristics of indium selenide thin films

“…As for the reduction in band gap with increasing the annealing temperature, it might be induced by the deterioration of the crystalline quality, which can be revealed by the variation of the intensity of the (110) diffraction peak or its FWHM value. The calculated band gaps for the sputtered In 2 Se 3 thin films are in good agreement with the reported value [20], as tabulated in table 2. At the same time, a similar change in E g with annealing temperature has been observed in the previous literature [24].…”

“…Recently, they demonstrated a substrate-directed method with an aim to achieve the phase control of In 2 Se 3 thin films [19]. Yan et al [20] mainly studied the influence of growth pressure on the characteristics of In 2 Se 3 thin films and concluded that the γ-In 2 Se 3 could be observed only if the working pressure was less than 4.0 Pa. An attempt has been made by Ashish Waghmare et al [16] to understand the underlying correlations between deposition time and the characteristics of In 2 Se 3 thin films. The effect of annealing temperature on structural and optoelectronic properties of γ-In 2 Se 3 thin films was investigated by Yogesh Hase et al [21] and proved that γ-In 2 Se 3 could be a promising material for photodetection applications.…”

$${\hbox {SO}}_{3}\hbox {H}$$ SO 3 H -functionalized magnetic $${\hbox {Fe}}_{3} {\hbox {O}}_{4}$$ Fe 3 O 4 nanoparticles as an efficient and reusable catalyst for one-pot synthesis of $${\upalpha }$$ α -amino phosphonates

“…The average size of the crystallites can be calculated using the Scherrer equation (D = Kλ/β cos θ), wherein this equation D is the mean crystalline size, K is a grain shape dependent constant (0.9), λ is the incident beam wavelength (0.154), θ is the Bragg reflection angle and β is the full width at half maximum (FWHM) of the main diffraction peak. [57][58][59] The SEM image of Fe 3 O 4 @SiO 2 -SO 3 H is presented in Figure 3, shows a spherical shape with nano dimension ranging from 117 to 220 nm.…”

POLYLOL S0LUTION SYNTHESIS OF ORIENTED In2Se3 NANOSHEETS AND THEIR APPLICATION ON HIGH-PERFORMANCE INORGANIC-ORGANIC HYBRID PHOTODETECTOR

“…In addition, In 2 Se 3 exhibits the advantages of adjustable bandgap [9], spontaneous polarization [10] and suppression of photo-carrier combination [11], making it fashionable in the fields of optoelectronic devices [12][13][14], lithium-ion batteries [15], phase change materials [16], catalysts [17] and so on. At present, high quality In 2 Se 3 nanosheets usually were prepared by vapor phase method [13,14,18,19] and exfoliation technique [20]. However, In 2 Se 3 has complex crystal structures (α, β, γ, δ, κ) [19,21] and Indium can be easily hydrolyzed [22], resulting in difficulty in fabricating a single phase, especially 2D layered In 2 Se 3 , by a solution method.…”

“…At present, high quality In 2 Se 3 nanosheets usually were prepared by vapor phase method [13,14,18,19] and exfoliation technique [20]. However, In 2 Se 3 has complex crystal structures (α, β, γ, δ, κ) [19,21] and Indium can be easily hydrolyzed [22], resulting in difficulty in fabricating a single phase, especially 2D layered In 2 Se 3 , by a solution method.…”