Effects of precursors and substrate materials on microstructure, dielectric properties, and step coverage of (Ba, Sr)TiO3 films grown by metalorganic chemical vapor deposition

Gao, Yufei; He, Shuai; Alluri, P.; Engelhard, Mark H.; Lea, Alan S.; Finder, J.; Melnick, B. M.; Hance, R. L.

doi:10.1063/1.371833

Cited by 24 publications

(13 citation statements)

References 9 publications

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“…Previously it was reported that both thermal decomposition and oxidation of the precursor molecules occur in MOCVD growth using ␤-diketonate type sources. 18 However, at higher temperatures, thermal decomposition is dominant. From our results, it appears that above ϳ798 K the rate of thermal decomposition of the Co precursor molecules is notably greater than that of the Zn precursor molecule.…”

Section: A Film Compositionmentioning

confidence: 99%

Epitaxial growth and properties of cobalt-dopedZnOonα−Al2O3

et al. 2004

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Co-doped ZnO͑Co x Zn 1−x O͒ is of potential interest for spintronics due to the prediction of room-temperature ferromagnetism. We have grown epitaxial Co x Zn 1−x O films on Al 2 O 3 ͑012͒ substrates by metalorganic chemical vapor deposition using a liquid precursor delivery system. High concentrations of Co͑x ഛ 0.35͒ can be uniformly incorporated into the film without phase segregation. Co is found to be in the +2 oxidation state, independent of x, by both surface-sensitive core-level x-ray photoemission and bulk-sensitive optical absorption spectroscopies. This material can be grown n-type by the deliberate incorporation of oxygen vacancies, but not by inclusion of ϳ1 at. % Al. Semiconducting films remain ferromagnetic up to 350 K. In contrast films without oxygen vacancies are insulating and nonmagnetic, suggesting that exchange interaction is mediated by itinerant carriers. The saturation and remanent magnetization on a per Co basis was very small ͑Ͻ0.1 B /Co͒, even in the best films. The dependence of saturation magnetization, as measured by optical magnetic circular dichroism, on magnetic field and temperature, agrees with the theoretical Brillouin function, demonstrating that the majority of the Co͑II͒ ions behave as magnetically isolated S =3/2 ions.

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Section: A Film Compositionmentioning

confidence: 99%

Epitaxial growth and properties of cobalt-dopedZnOonα−Al2O3

et al. 2004

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“…Fig. 15 compares the potential distribution of the proposed device with different RFP step-coverages, where the step-coverage is defined as the ratio of the sidewall thickness to the bottom thickness [40]. With the increase in step-coverage, RFP at the bottom sustains more voltage than that on the sidewall, and the potential distribution becomes not uniform which impacts BV and changes the breakdown point.…”

Section: Discussion On Fabricationmentioning

confidence: 99%

A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate

Cheng

Chen

et al. 2019

IEEE J. Electron Devices Soc.

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An improved trench lateral double-diffused MOSFET (T-LDMOS) is proposed. It has a quasi vertical super junction (QVSJ) drift region and adopts a resistive field plate (RFP) to help QVSJ satisfy charge-balance. The realization of RFP barely complicates the device fabrication, but it motivates QVSJ to significantly improve the relationship between breakdown voltage (BV) and specific on-state resistance (R ON,SP). The simulation results show that compared with the conventional QVSJ T-LDMOS, the proposed one gains the R ON,SP reduced by about 79% under the same BV requirement of about 500 V. It therefore presents an excellent figure of merit (FOM) (FOM = BV 2 /R ON,SP , Baliga's FOM) up to 29.8 MW/cm 2 , which is superior to the prior art and exhibits a bright prospect of saving energy. INDEX TERMS Trench LDMOS (T-LDMOS), quasi vertical super junction (QVSJ), resistive field plate (RFP).

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“…BST film can be produced using fairly simple equipment on a tight budget and in relatively short time [9][10][11]. In the film-producing process, there are a number of methods that could be used such as the metalorganic chemical vapor deposition (MOCVD) method [12][13][14], the chemical vapor deposition method [15], the sol-gel method [16][17][18][19], the atomic layer deposition (ALD) method [20], the pulsed laser ablation deposition (PLAD) method [21,22], rf sputtering [17,23,24], and chemical solution deposition (CSD) method [24][25][26][27][28][29][30][31]. The CSD method is superior as it can control the film stoichiometry with good quality, an easy procedure, and has a fairly affordable cost [32][33][34].…”

Section: Introductionmentioning

confidence: 99%

Application of Ba0.5Sr0.5TiO3 (Bst) Film Doped with 0%, 2%, 4% and 6% Concentrations of RuO2 as an Arduino Nano-Based Bad Breath Sensor

et al. 2019

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Ba0.5Sr0.5TiO3 (BST) film doped with variations in RuO2 concentration (0%, 2%, 4%, and 6%) has been successfully grown on a type-p silicon substrate (100) using the chemical solution deposition (CSD) method and spin-coating at a speed of 3000 rpm for 30 s. The film on the substrate was then heated at 850 °C for 15 h. The sensitivity of BST film + RuO2 variations as a gas sensor were characterized. The sensitivity characterization was assisted by various electronic circuitry with the purpose of producing a sensor that is very sensitive to gas. The responses from the BST film + RuO2 variation were varied, depending on the concentration of the RuO2 dope. BST film doped with 6% RuO2 had a very good response to halitosis gases; therefore, this film was applied as the Arduino-Nano-based bad-breath detecting sensor. Before it was integrated with the microcontroller, the voltage output of the BST film was amplified using an op-amp circuit to make the voltage output from the BST film readable to the microcontroller. The changes in the voltage response were then shown on the prototype display. If the voltage output was ≤12.9 mV, the display would read “bad breath”. If the voltage output >42.1 mV, the display would read “fragrant”. If 12.9 mV < voltage output ≤ 42.1 mV, the display would read “normal”.

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Effects of precursors and substrate materials on microstructure, dielectric properties, and step coverage of (Ba, Sr)TiO3 films grown by metalorganic chemical vapor deposition

Cited by 24 publications

References 9 publications

Epitaxial growth and properties of cobalt-dopedZnOonα−Al2O3

Epitaxial growth and properties of cobalt-dopedZnOonα−Al2O3

A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate

Application of Ba0.5Sr0.5TiO3 (Bst) Film Doped with 0%, 2%, 4% and 6% Concentrations of RuO2 as an Arduino Nano-Based Bad Breath Sensor

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