Effects of power density and molecule dwell time on compositional and optoelectronic properties of a-SiC : H alloys

Demichelis, Francesca; Crovini, G.; Giorgis, Fabrizio; Pirri, Candido Fabrizio; Tresso, Elena Maria; Rigato, V.; Coscia, U.; Ambrosone, G.; Catalanotti, S.; Rava, P.

doi:10.1016/0038-1098(95)00832-2

Cited by 8 publications

(7 citation statements)

References 10 publications

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“…In any case the μτ product of films of this paper decreases by less of two orders of magnitude as E 04 increases from 2.07 to 2.20 eV. In addition, the μτ values of these nanostructured films are more than one order of magnitude higher than those of the typical a-SiC:H films obtained from undiluted mixtures of refs [27,28] and are comparable with the high μτ values of the device quality films of Ref. [28] obtained by high H 2 dilution of silane-methane mixtures.…”

Section: Results and Discussion The Carbon Content X = [C]/([c]+[si])mentioning

confidence: 57%

“…As a result the μτ product of free electrons generated under illumination can be written as: μτ = σ ph /eG, where e is the electron charge. In order to compare the photoconductivity yield of the deposited films with the typical data of a-SiC:H films obtained by PECVD from undiluted [27,28] and 95% H 2 diluted [28] silane-methane gas mixtures, the μτ values have been determined with a photon flux of 2 × 10 15 cm -2 s -1 for a wavelength at which α = 10 4 cm -1 i.e. for G = 2 ×10 19 cm -3 s -1 .…”

Section: Results and Discussion The Carbon Content X = [C]/([c]+[si])mentioning

confidence: 99%

“…The μτ values of the investigated samples as well as those of the samples of Refs. [27,28] have been plotted in Fig. 5 versus the optical band gap E 04 .…”

Section: Results and Discussion The Carbon Content X = [C]/([c]+[si])mentioning

confidence: 99%

“…Mobility lifetime product μτ vs. optical gap E 04 : stars are the data of the present work, circles, the data of a-SiC:H films deposited by H 2 +SiH 4 +CH 4 mixtures[28], squares[28] and triangles[27] are the data of a-SiC:H films deposited by SiH 4 +CH 4 mixtures.…”

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confidence: 99%

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Structural and photoconductivity properties of silicon carbon thin films

Coscia

Ambrosone

Basa

et al. 2014

Phys. Status Solidi C

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Nanostructured films composed of silicon crystallites dispersed in an hydrogenated amorphous silicon carbon matrix have been deposited by plasma enhanced chemical vapour deposition from silane‐methane mixtures diluted in hydrogen by varying the rf power. Compositional, structural, optical and photoconductivity properties of the films have been investigated. The increase in rf power in the 40‐80 W range enhances the incorporation of carbon and hydrogen in the amorphous matrix and decreases the volume fraction and size of the silicon crystallites leading to an enlargement of the optical band gap from 2.07 to 2.20 eV. Steady state photoconductivity measurements, performed under monochromatic radiations in the visible range, have demonstrated the occurrence of monomolecular recombination kinetics in the samples under illumination and that the mobility‐lifetime product of the free electrons as a function of the optical gap decreases from 1.9 × 10–7 to 2.5 × 10–9 cm2V–1 as in the case of device quality films deposited by silane‐methane mixtures diluted in hydrogen. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Results and Discussion The Carbon Content X = [C]/([c]+[si])mentioning

confidence: 57%

Section: Results and Discussion The Carbon Content X = [C]/([c]+[si])mentioning

confidence: 99%

“…The μτ values of the investigated samples as well as those of the samples of Refs. [27,28] have been plotted in Fig. 5 versus the optical band gap E 04 .…”

Section: Results and Discussion The Carbon Content X = [C]/([c]+[si])mentioning

confidence: 99%

mentioning

confidence: 99%

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Structural and photoconductivity properties of silicon carbon thin films

Coscia

Ambrosone

Basa

et al. 2014

Phys. Status Solidi C

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“…The rf power in the discharge and the annealing temperature determine the gas depletion in the mixture. 8 In this article, we have used a Raman spectrophotometer and ultraviolet-visible ͑UV-Vis͒ spectrophotometer for determining optical properties, and current-voltage ͑I -V͒ measurements for electrical properties. Thin films of a-SiC:H were prepared by the glow discharge decomposition of SiH 4 and CH 4 gas mixture and how the properties change with the rf power and annealing temperature were investigated.…”

Section: Introductionmentioning

confidence: 99%

Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

Park

Choi

Hong

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inAnomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition J. Appl. Phys. 107, 043503 (2010); 10.1063/1.3305805 Supermagnetron plasma chemical vapor deposition and qualitative analysis of electrically conductive diamondlike amorphous carbon films Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition Wide band gap amorphous hydrogenated carbon films grown by plasma enhanced chemical vapor deposition

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RF-PECVD deposition and optical properties of hydrogenated amorphous silicon carbide thin films

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Zhong

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Ceramics International

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Effects of power density and molecule dwell time on compositional and optoelectronic properties of a-SiC : H alloys

Cited by 8 publications

References 10 publications

Structural and photoconductivity properties of silicon carbon thin films

Structural and photoconductivity properties of silicon carbon thin films

Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

RF-PECVD deposition and optical properties of hydrogenated amorphous silicon carbide thin films

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