Effects of potassium incorporation on the structural, optical, vibrational and electrical properties of NiO sprayed thin films for p-type optical windows

Loukil, A.; Boukhachem, A.; Amor, Mohamed Ben; Ghamnia, M.; Raouadi, K.

doi:10.1016/j.ceramint.2016.02.040

Cited by 54 publications

(15 citation statements)

References 78 publications

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“…These localized defect states produce an absorption tail extending deep into the forbidden gap. Indeed, in an ideal material, the band is empty; deformation of equal-energy surface and spreading of these state densities are due to defects [57]. This is consistent with the findings reported by Mott et al [58] and Kleider et al [59] indeed, in contrast to the crystalline structures, where the fundamental edge is mainly determined by the conduction band and valence band.…”

Section: Absorption Coefficient and Urbach Energysupporting

confidence: 89%

Nanostructured device based on coated ZnO layer as a window in solar cell applications

Mokhtari

Benhaliliba

Boukhachem

et al. 2018

Materials Science-Poland

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This work highlights some physical properties related to the influence of aluminum, tin and copper incorporation on nanostructured zinc oxide (ZnO:M; M:Al, Sn and Cu) thin films prepared by ultrasonic spray pyrolysis technique (USP) on glass substrate at 350±5°C. For the as-grown layers, M-to Zn-ratio was fixed at 1.5 %. The effects of metal doping on structural, morphological, optical and electrical properties were investigated. X-ray diffraction pattern revealed that the as-prepared thin films crystallized in hexagonal structure with (0 0 2) preferred orientation. The surface topography of the films was performed by atomic force microscopy. AFM images revealed inhibition of grain growth due to the doping elements incorporation into ZnO matrix, which induced the formation of ZnO nanoparticles. Optical measurements showed a high transparency around 90 % in visible range. Some optical parameters, such as optical band gap, Urbach energy, refractive index, extinction coefficient and dielectric constant were studied in terms of doping element. Particularly, dispersion of refractive index was discussed in terms of both Cauchy and single oscillator model proposed by Wemple and DiDomenico. Cauchy parameters and single oscillator energy E 0 as well as dispersion energy E d were calculated. Finally, electrical properties were investigated by means of electrical conductivity and Hall effect measurements. The measurements confirmed n type conductivity of the prepared thin films and a good agreement between the resistivity values and the oxidation number of doping element. The main aim of this work was the selection of the best candidate for doping ZnO for optoelectronics applications. The comparative study of M doped ZnO (M:Al, Sn and Cu) was performed. High rectifying efficiency of the Al/n-ZnO/p-Si/Al device was achieved and non-ideal behavior was revealed with n > 4.

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Section: Absorption Coefficient and Urbach Energysupporting

confidence: 89%

Nanostructured device based on coated ZnO layer as a window in solar cell applications

Mokhtari

Benhaliliba

Boukhachem

et al. 2018

Materials Science-Poland

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“…While, and regarding the variation of absorption coefficient of sprayed NiO films using different precoursors, it found that the films absorbe lower energies. This is due to a spreading of state denisities in the band gap due to defects [36]. in addition, the internal electric field due to the impurities distributions as confirmed by XPS results.…”

Section: Optical Propertiessupporting

confidence: 58%

Effect of precursor solutions on the structural and optical properties of sprayed NiO thin films

Gomaa

Yazdi

Schmidt

et al. 2017

Materials Science in Semiconductor Processing

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Nickel oxide thin films were deposited by a simple and low-cost spray pyrolysis technique using three different precursors: nickel nitrate, nickel chloride, and nickel acetate on corning glass substrates. X-ray diffraction show that the NiO films are polycrystalline and have a cubic crystal structure, although predominantly with a preferred 111-orientation in the growth direction and a random in-plane orientation. The deconvolution of the Ni 2p and O 1s core level X-ray photoelectron-spectra of nickel oxides produced by using different precursors indicates a shift of the binding energies. The sprayed NiO deposited from nickel nitrate has an optical transmittance in the range of 60-65% in the visible region. The optical band gap energies of the sprayed NiO films deposited from nickel nitrate, nickel chloride and nickel acetate are 3.5, 3.2 and 3.43 eV respectively. Also, the extinction coefficient and refractive index of NiO films have been calculated from transmittance and reflectance measurements. The average value of refractive index for sprayed films by nickel nitrate, nickel chloride and nickel acetate are 2.1, 1.6 and 1.85 respectively. It is revealed that the band gap and refractive index of NiO films by using nickel nitrate corresponds to the commonly reported values. We attribute the observed behavior in the optical band gap and optical constants as due to the change of the Ni/O ratio.

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“…In particular, NiO is considered an attractive candidate due to its wide band gap above 3.6 eV, intrinsic p-type conductivity, abundant availability, chemical stability, non-toxicity, low-cost, the fact that its easily producible, etc. [19][20][21]. To date, NiO has been widely studied in various domains, such as photoanodes [22], electrochromic materials [23], gas sensors [24], and photoelectrochemical cells [25,26].…”

Section: Introductionmentioning

confidence: 99%

The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering

et al. 2018

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In this work, p-type non-stoichiometric Ni 1−x O thin films were deposited by oxygen ion beam assisted RF sputtering on glass substrates. The influence of the oxygen flow ratio (0-100%) on the films' optoelectronic properties was investigated. In our experimental conditions, all the films are crystallized in the cubic NiO phase. However, their crystallinity and mean grain size decreases with increasing oxygen flow ratios. Meanwhile, the films' conductivity improves from 9.1 to 25.4 S•cm −1. This is due to the fact that the nickel vacancies along with hole carriers can be introduced into NiO films when they are deposited under higher oxygen flow ratio conditions. Thus, the O-rich environment is beneficial in enhancing the films' carrier concentrations. In addition, with an increasing oxygen flow ratio, the film's transmittance degrades. The direct optical band gap of Ni 1−x O films declines slightly from 3.99 to 3.95 eV, with the oxygen flow ratio increasing from 0% to 100%.

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Effects of potassium incorporation on the structural, optical, vibrational and electrical properties of NiO sprayed thin films for p-type optical windows

Cited by 54 publications

References 78 publications

Nanostructured device based on coated ZnO layer as a window in solar cell applications

Nanostructured device based on coated ZnO layer as a window in solar cell applications

Effect of precursor solutions on the structural and optical properties of sprayed NiO thin films

The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering

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