Effects of post-transfer annealing and substrate interactions on the photoluminescence of 2D/3D monolayer WS<sub>2</sub>/Ge heterostructures

Zhang, Tianyi; Voshell, Andrew; Zhou, Da Li; Ward, Zachary D.; Yu, Zhuohang; Liu, Mingzu; Díaz-Aponte, Kevin O.; Granzier-Nakajima, Tomotaroh; Lei, Yu; Li, He; Terrones, Humberto; Elías, Ana Laura; Rana, Mukti M.; Terrones, Mauricio

doi:10.1039/d3nr00961k

Nanoscale

2023

DOI: 10.1039/d3nr00961k

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Effects of post-transfer annealing and substrate interactions on the photoluminescence of 2D/3D monolayer WS₂/Ge heterostructures

Tianyi Zhang

Andrew Voshell

Da Li Zhou

et al.

Abstract: The ultraflat and dangling bond-free features of two-dimensional (2D) transition metal dichalcogenides (TMDs) endow them with great potential to be integrated with arbitrary three-dimensional (3D) substrates, forming mixed-dimensional 2D/3D heterostructures....

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Cited by 2 publications

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Sulfur Vacancy Related Optical Transitions in Graded Alloys of Mo_xW_1‐xS₂ Monolayers

Ghafariasl,

Zhang,

Ward

et al. 2024

Advanced Optical Materials

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Engineering electronic bandgaps is crucial for applications in information technology, sensing, and renewable energy. Transition metal dichalcogenides (TMDCs) offer a versatile platform for bandgap modulation through alloying, doping, and heterostructure formation. Here, the synthesis of a 2D MoxW1‐xS2 graded alloy is reported, featuring a Mo‐rich center that transitions to W‐rich edges, achieving a tunable bandgap of 1.85 to 1.95 eV when moving from the center to the edge of the flake. Aberration‐corrected high‐angle annular dark‐field scanning transmission electron microscopy showed the presence of sulfur monovacancy, VS, whose concentration varied across the graded MoxW1‐xS2 layer as a function of Mo content with the highest value in the Mo‐rich center region. Optical spectroscopy measurements supported by ab initio calculations reveal a doublet electronic state of VS, which is split due to the spin‐orbit interaction, with energy levels close to the conduction band or deep in the bandgap depending on whether the vacancy is surrounded by W atoms or Mo atoms. This unique electronic configuration of VS in the alloy gave rise to four spin‐allowed optical transitions between the VS levels and the valence bands. The study demonstrates the potential of defect and optical engineering in 2D monolayers for advanced device applications.

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Sulfur Vacancy Related Optical Transitions in Graded Alloys of Mo_xW_1‐xS₂ Monolayers

Ghafariasl,

Zhang,

Ward

et al. 2024

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

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Photoluminescence properties of two-dimensional semiconductor heterointerfaces

Liu,

Chen,

Chen

et al. 2024

Opt. Express

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Two-dimensional metal-sulfur compounds have attracted much attention due to their novel physical properties, such as layered structure, ultrathin physical dimensions, and continuously tunable bandgap. The vertical stacking of different 2D semiconductors enables the heterojunction to retain the excellent properties of its constituent materials and has physical properties such as interlayer energy transfer and interlayer carrier transfer. In this paper, we utilize the carrier interlayer transfer properties of p-n heterojunctions and form heterojunctions using p-type Te and PdSe2 prepared with n-type monolayer WS2 using the microzone transfer technique. We found that the PL spectrum of monolayer WS2 is purer after heterojunction formation. The photoluminescence peaks representing exciton recombination are sharper, while the peaks represented by trions almost disappear. These phenomena indicate that we can utilize p-n junctions to capture the PL spectra of excitons in WS2, which is important for the further study of the optical properties of 2D metal-sulfur compounds.

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Effects of post-transfer annealing and substrate interactions on the photoluminescence of 2D/3D monolayer WS₂/Ge heterostructures

Abstract: The ultraflat and dangling bond-free features of two-dimensional (2D) transition metal dichalcogenides (TMDs) endow them with great potential to be integrated with arbitrary three-dimensional (3D) substrates, forming mixed-dimensional 2D/3D heterostructures....

Cited by 2 publications

References 60 publications

Sulfur Vacancy Related Optical Transitions in Graded Alloys of Mo_xW_1‐xS₂ Monolayers

Sulfur Vacancy Related Optical Transitions in Graded Alloys of Mo_xW_1‐xS₂ Monolayers

Photoluminescence properties of two-dimensional semiconductor heterointerfaces

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Effects of post-transfer annealing and substrate interactions on the photoluminescence of 2D/3D monolayer WS2/Ge heterostructures

Abstract: The ultraflat and dangling bond-free features of two-dimensional (2D) transition metal dichalcogenides (TMDs) endow them with great potential to be integrated with arbitrary three-dimensional (3D) substrates, forming mixed-dimensional 2D/3D heterostructures....

Cited by 2 publications

References 60 publications

Sulfur Vacancy Related Optical Transitions in Graded Alloys of MoxW1‐xS2 Monolayers

Sulfur Vacancy Related Optical Transitions in Graded Alloys of MoxW1‐xS2 Monolayers

Photoluminescence properties of two-dimensional semiconductor heterointerfaces

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Product

Resources

About

Effects of post-transfer annealing and substrate interactions on the photoluminescence of 2D/3D monolayer WS₂/Ge heterostructures

Sulfur Vacancy Related Optical Transitions in Graded Alloys of Mo_xW_1‐xS₂ Monolayers

Sulfur Vacancy Related Optical Transitions in Graded Alloys of Mo_xW_1‐xS₂ Monolayers