Photoluminescence properties of two-dimensional semiconductor heterointerfaces

Abstract

Two-dimensional metal-sulfur compounds have attracted much attention due to their novel physical properties, such as layered structure, ultrathin physical dimensions, and continuously tunable bandgap. The vertical stacking of different 2D semiconductors enables the heterojunction to retain the excellent properties of its constituent materials and has physical properties such as interlayer energy transfer and interlayer carrier transfer. In this paper, we utilize the carrier interlayer transfer properties of p-n heterojunctions and form heterojunctions using p-type Te and PdSe2 prepared with n-type monolayer WS2 using the microzone transfer technique. We found that the PL spectrum of monolayer WS2 is purer after heterojunction formation. The photoluminescence peaks representing exciton recombination are sharper, while the peaks represented by trions almost disappear. These phenomena indicate that we can utilize p-n junctions to capture the PL spectra of excitons in WS2, which is important for the further study of the optical properties of 2D metal-sulfur compounds.